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MTP4N80E-VB Product details

Product introduction:

1. MTP4N80E-VB Product Introduction
The MTP4N80E-VB is a single N-channel power MOSFET in a **TO220** package, designed for high voltage and high power applications. The device has a **V\(_{DS}\)** maximum voltage of 800V, which is suitable for high voltage power supplies and industrial applications. The gate-source voltage (V\(_{GS}\)) of the MTP4N80E-VB is ±30V, providing a wide control range, enabling it to operate stably under different switching conditions.
The gate threshold voltage (V\(_{th}\)) of this MOSFET is 3.5V, ensuring turn-on at a lower gate voltage, suitable for a variety of control circuits. The on-resistance is **1300mΩ**@V\(_{GS}\)=10V, which is relatively high, but still provides effective performance in its high voltage applications. Its maximum continuous drain current is 5A, suitable for application scenarios requiring high voltage and medium current. The MTP4N80E-VB's **SJ_Multi-EPI** technology further enhances its performance, providing higher current density and lower switching losses.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 800V 3.5V 5A 1300mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 800V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 800V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. MTP4N80E-VB Parameter Description
| **Parameter** | **Value** | **Description** |
|---------------------|------------------------|---------------------------------|
| **Package** | TO220 | Common package for high-power MOSFET, good heat dissipation|
| **Polarity** | N-channel | Commonly used in high-speed switching applications|
| **V\(_{DS}\)** | 800V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±30V | Maximum gate-source withstand voltage|
| **V\(_{th}\)** | 3.5V | Gate threshold voltage|
| **R\(_{DS(ON)}\)** | 1300mΩ @V\(_{GS}\)=10V | On-resistance, affects power consumption|
| **I\(_D\)** | 5A | Continuous Drain Current |
| **Technology** | SJ_Multi-EPI | Multi-layer EPI technology improves current density and efficiency |

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Domain and module applications:

3. MTP4N80E-VB Applications and Modules

1. **High-voltage power supply**
MTP4N80E-VB is used as the main switching element in high-voltage switch-mode power supplies (SMPS), and can withstand input voltages up to 800V, making it very suitable for medium-power power conversion applications.

2. **Motor drive control**
In motor control modules, this MOSFET can be used as a switching element for reverse control and drive circuits, suitable for high-voltage and high-current motor applications, and can effectively control the start, stop and direction of the motor.

3. **Inverter and photovoltaic system**
In photovoltaic inverters, MTP4N80E-VB can be used for DC to AC conversion, helping to convert solar energy into usable electrical energy, especially in high-voltage photovoltaic systems.

4. **Welding equipment**
This MOSFET is also widely used in arc welding and laser welding equipment, as a switching element to provide the necessary high voltage and current control to ensure the stability and reliability of the welding process.

5. **Industrial control system**
In various industrial control systems, such as power control, load switching and protection circuits, the MTP4N80E-VB can meet the control needs of the equipment with its high voltage and medium current characteristics.

6. **LED lighting driver**
This device can be used in LED driver circuits and is suitable for high-voltage LED lighting applications. It can provide stable current output to ensure the brightness and efficiency of the LED.

With its high voltage and reliability, the MTP4N80E-VB is an ideal choice for high-voltage power management and power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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