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MMDF4N01HDR2G-VB Product details

Product introduction:

MMDF4N01HDR2G-VB Product Introduction

**MMDF4N01HDR2G-VB** is a high-performance dual N-channel MOSFET in SOP8 package, designed for low to medium voltage power management and switching applications. This MOSFET has a drain-source voltage (VDS) of up to 20V and has a very low on-resistance (RDS(ON)) characteristic, which makes it have very low power consumption and heat generation when switching. The MMDF4N01HDR2G-VB with Trench technology excels in performance and efficiency, and is very suitable for high-frequency and high-efficiency circuit design in modern electronic products.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A 19mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
MMDF4N01HDR2G-VB Detailed parameter description

- **Package type**: SOP8
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 26 mΩ @ VGS = 4.5V
- 19 mΩ @ VGS = 10V
- **Maximum continuous leakage current (ID)**: 7.1A
- **Technology type**: Trench

Domain and module applications:

Applications and module examples

1. **Power management modules**: MMDF4N01HDR2G-VB is commonly used in DC-DC converters and power supplies. Its low on-resistance and high current handling capability can help improve energy efficiency and reduce system heat, thereby extending the life of the device.

2. **Load switch**: This MOSFET is suitable for load switch circuits, which can efficiently control the switching of power under different loads to ensure system stability and reliability.

3. **LED drive circuit**: In LED lighting applications, MMDF4N01HDR2G-VB can be used to effectively drive LED modules and optimize current control to increase brightness and reduce energy consumption.

4. **Consumer electronics**: This MOSFET is suitable for power management modules in various consumer electronic devices such as smartphones, tablets and laptops, ensuring their high efficiency under low voltage conditions.

5. **Industrial Control Systems**: MMDF4N01HDR2G-VB can also be used in industrial automation and control systems. It is suitable for electrical control applications such as motor drives and sensor interfaces to ensure efficient and reliable power management.

Through its excellent performance and wide range of application scenarios, MMDF4N01HDR2G-VB has become an important part of modern power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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