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MMDF2P01HDR2G-VB Product details

Product introduction:

1. MMDF2P01HDR2G-VB Product Introduction
MMDF2P01HDR2G-VB is a **dual P-channel MOSFET**, packaged in **SOP8**, designed for low-voltage and high-performance applications. The device has a drain-source voltage (**VDS**) of -20V, and a gate-source voltage (**VGS**) that can withstand ±20V. The turn-on voltage (**Vth**) is -1.2V, and it can turn on quickly at a lower gate voltage. Its on-resistance (**RDS(ON)**) is 18mΩ at 4.5V gate drive and 16mΩ at 10V, showing excellent current transfer capability, with a rated drain current of **-8.9A**. Using **Trench (trench type) technology**, this MOSFET provides high efficiency and low conduction loss in a miniaturized design, making it very suitable for electronic circuits that require high current and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-P+P -20V -1.2V -8.9A 16mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-P+P -20V -1.2V -8.9A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-P+P -20V -1.2V -8.9A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-P+P
2. MMDF2P01HDR2G-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------------|--------------------------|----------------------------------|
| **Package type** | SOP8 | Small package, suitable for compact circuit design|
| **Configuration** | Dual P-channel | Contains two P-channel MOSFETs |
| **VDS (drain-source voltage)** | -20V | Maximum supported drain-source voltage|
| **VGS (gate-source voltage)** | ±20V | Maximum supported gate drive voltage range|
| **Vth (turn-on voltage)** | -1.2V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=4.5V** | 18mΩ | On-resistance at 4.5V gate drive|
| **RDS(ON)@VGS=10V** | 16mΩ | On-resistance at 10V gate drive|
| **ID(Drain Current)** | -8.9A | Maximum Drain Current|
| **Technology** | Trench Technology| Provides lower on-resistance and higher switching efficiency|

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Domain and module applications:

III. Application fields and module examples
1. **Power management system**
- MMDF2P01HDR2G-VB is widely used in power management modules as a load switch for charge and discharge control of battery-powered devices to improve power efficiency and extend battery life.

2. **Portable electronic products**
- In portable devices such as mobile phones and tablets, this MOSFET can be used for power switching and load control to achieve efficient energy management and ensure normal operation of the device in low-power mode.

3. **LED drive circuit**
- It can be used in LED lighting control to control the switch of LED lights, realize intelligent lighting systems, support dimming and scene settings, and improve user experience.

4. **Automotive electronic systems**
- In the electrical system of the car, MMDF2P01HDR2G-VB can be used to control power windows, seat adjustments and other high-current loads to ensure the stability and safety of the power supply.

5. **Industrial Automation Equipment**
- Suitable for drive circuits in industrial control systems, such as electric actuators and sensors, providing reliable power switch solutions to help achieve automation control.

MMDF2P01HDR2G-VB is very suitable for **various electronic products and systems that require high reliability and low power consumption due to its miniaturization, high efficiency and adaptability to high current applications**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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