Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SC70-3 |
Single-N |
20V |
|
0.5~1.5V |
4A |
48mΩ |
|
36mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SC70-3 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SC70-3 |
Single-N |
20V |
|
0.5~1.5V |
4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SC70-3 |
Single-N |
20V |
|
0.5~1.5V |
4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SC70-3 |
Single-N |
|
|
|
|
|
|
|
**MMBF2201NT1G-VB Detailed Parameter Description**
| **Parameter** | **Value** | **Description** |
|----------------------|--------------------------------|--------------------------------------------------|
| **Package** | SC70-3 | Ultra-small surface mount package for space-constrained applications. |
| **Configuration** | Single N-channel | Allows controlled current flow from source to drain at positive gate voltage. |
| **VDS (Drain-Source Voltage)** | 20V | Maximum voltage between drain and source to ensure safe operation. |
| **VGS (Gate-Source Voltage)** | ±12V | Maximum gate-source voltage limit to ensure reliability. |
| **Vth (Threshold Voltage)** | 0.5 ~ 1.5V | Gate threshold voltage range when the device starts to conduct. |
| **RDS(ON) @ VGS = 2.5V** | 48mΩ | On-resistance at 2.5V gate. |
| **RDS(ON) @ VGS = 4.5V** | 40mΩ | On-resistance at 4.5V gate. |
| **RDS(ON) @ VGS = 10V** | 36mΩ | On-resistance at 10V gate, providing best efficiency. |
| **ID (Continuous Drain Current)** | 4A | Maximum current the device can carry continuously. |
| **Technology** | Trench | Provides high current density and low RDS(ON), ensuring efficient switching. |
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Domain and module applications：
**Application Examples of MMBF2201NT1G-VB**
1. **Consumer Electronics**
- **Battery Management System (BMS):** Due to its low on-resistance, the MMBF2201NT1G-VB is ideal for battery protection circuits and charge management, helping to improve charging efficiency and extend battery life.
- **Smartphones and Tablets:** This MOSFET is widely used in power management modules for mobile phones and tablets, providing reliable switching and power distribution functions.
2. **Power Management Modules**
- **DC-DC Converters:** In buck converters, as high-side switches, the low RDS(ON) characteristics of this MOSFET can improve efficiency and reduce heat, making it suitable for high-frequency applications.
- **Load Switch:** The MMBF2201NT1G-VB can be used as a load switch in various electronic devices for fast switching control.
3. **Automotive and Industrial Applications**
- **Sensor and Actuator Control:** In automotive electronics, this device can be used to control the power supply of sensors and actuators, ensuring efficient and reliable operation.
- **Industrial Automation Equipment:** In industrial automation, the MMBF2201NT1G-VB is used in motor drive and other load control applications for precise power management.
---
**MMBF2201NT1G-VB** MOSFET combines a small package, low on-resistance and efficient trench technology, making it an excellent performer in applications in consumer electronics, power management, and automotive and industrial fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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