Product introduction：
Product Introduction
MIP50N06-VB is a high-performance unipolar N-Channel MOSFET in a **TO220** package, designed for high current and high efficiency applications. The device has a maximum drain-source voltage (VDS) of **60V**, which can operate reliably at higher voltages and is suitable for a variety of power management and switching applications. Its gate-source voltage range is ±20V, allowing it to operate stably in a variety of voltage control environments. The threshold voltage (Vth) of MIP50N06-VB is **1.7V**, ensuring that it can be effectively turned on at lower voltages. The on-resistance (RDS(ON)) of this MOSFET at VGS of **4.5V** and **10V** is **13mΩ** and **11mΩ**, respectively, indicating that it has excellent conduction characteristics and effectively reduces power consumption and heat generation. In addition, the maximum drain current (ID) is **60A**, providing strong current carrying capacity for high load applications. The MIP50N06-VB manufactured with **Trench** technology further optimizes conduction performance and thermal management.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
60A |
|
|
11mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
60V |
|
1.7V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: MIP50N06-VB
- **Package**: TO220
- **Configuration**: Unipolar N-Channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 13mΩ (when VGS=4.5V)
- 11mΩ (when VGS=10V)
- **Maximum leakage current (ID)**: 60A
- **Technology**: Trench
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Domain and module applications：
Applications and module examples
1. **Switching Power Supply (SMPS)**
- MIP50N06-VB is widely used in switching power supplies. With its low on-resistance and high current carrying capacity, it can achieve efficient power conversion, reduce energy loss and improve overall efficiency.
2. **Electric Vehicles**
- In the power management and drive control system of electric vehicles, MIP50N06-VB can be used as the main switch to ensure efficient transmission and control of power and improve the power performance of the vehicle.
3. **Motor Control**
- This MOSFET is suitable for various motor drive applications, such as brushless DC motor (BLDC) control, can withstand high load current, and provide good dynamic response and control performance.
4. **Industrial Automation Equipment**
- In industrial automation and control systems, MIP50N06-VB can be used as a power switch to improve the efficiency and stability of equipment. It is widely used in sensors, actuators and other control modules.
5. **LED drive circuit**
- In LED lighting systems, the device can be used as an efficient drive switch to provide a stable current, ensure efficient LED lighting, and extend the service life.
Through these applications, MIP50N06-VB demonstrates its advantages in high efficiency and reliability, and is an ideal choice in the field of modern power management and electrical control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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