Product introduction：
Product Introduction
MI8635-VB is a unipolar P-Channel MOSFET in a compact **DFN8(3x3)** package, suitable for applications requiring high performance and miniaturization. The device supports **-30V drain-source voltage (VDS)**, which can provide stable operating performance in low voltage environments. Its maximum gate-source voltage (VGS) range is ±20V, ensuring a wide control voltage compatibility. The threshold voltage (Vth) of MI8635-VB is -2.5V, allowing it to be reliably turned on at lower voltages. With low on-resistances of **18mΩ (VGS=4.5V)** and **11mΩ (VGS=10V)**, the device excels in reducing power consumption and heat generation. At the same time, the **-45A leakage current (ID)** provides good current carrying capability, which is very suitable for high-frequency switching and power management applications. This MOSFET uses advanced **Trench technology** to optimize conduction characteristics and thermal management capabilities.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-P |
-30V |
|
-2.5V |
-45A |
|
|
11mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-P |
-30V |
|
-2.5V |
-45A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-P |
-30V |
|
-2.5V |
-45A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: MI8635-VB
- **Package**: DFN8 (3x3)
- **Configuration**: Unipolar P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 18mΩ (when VGS=4.5V)
- 11mΩ (when VGS=10V)
- **Maximum leakage current (ID)**: -45A
- **Technology**: Trench
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Domain and module applications：
Applications and module examples
1. **Power management and voltage regulation modules**
- MI8635-VB is commonly used in switching regulators and DC-DC converters to achieve efficient power conversion. Its low on-resistance reduces power consumption, making it an excellent performer in power management modules.
2. **Electric vehicles and battery management systems**
- In electric vehicles and energy storage systems, this MOSFET can be used in battery protection and power control modules to effectively reduce power loss and ensure long-term stable operation of the system.
3. **LED drive and lighting systems**
- Suitable for driving switch circuits in LED lighting equipment, MI8635-VB provides stable current control to ensure efficient lighting and long-term operation.
4. **Consumer electronics**
- In power modules for consumer electronics such as mobile phones and laptops, the device's compact package and low power consumption enable it to extend battery life and reduce heat.
5. **Industrial Automation Equipment**
- MI8635-VB can be used in power management modules in industrial equipment such as PLCs and motor controllers to help improve the stability and energy efficiency of the equipment.
Through these applications, MI8635-VB demonstrates its advantages in high performance, reliability and miniaturized design, making it an ideal choice for modern power management and electronic control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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