Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Dual-N |
20V |
|
0.5~1.5V |
9.4A |
|
|
10mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Dual-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Dual-N |
20V |
|
0.5~1.5V |
9.4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Dual-N |
20V |
|
0.5~1.5V |
9.4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Dual-N |
|
|
|
|
|
|
|
2. MI8612-VB MOSFET Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------------|-------------------------------------------------|
| **Package Type** | DFN8 (3x3) | Compact package, suitable for modules with small design|
| **Polarity** | Dual-N | The device contains two independent N-type MOSFETs |
| **Drain-Source Voltage (V_DS)** | 20V | Maximum operating voltage, suitable for low-voltage applications|
| **Gate-Source Voltage (V_GS)** | ±20V | Maximum Withstand Gate Drive Voltage Range|
| **Threshold Voltage (V_th)** | 0.5V ~ 1.5V | Start-up voltage, supports logic level drive|
| **On-Resistance (R_DS(ON))** | 12mΩ @ V_GS = 4.5V; 10mΩ @ V_GS = 10V | On-state resistance value, ensuring low losses|
| **Continuous Drain Current (I_D)** | 9.4A | Maximum current supported with proper heat dissipation|
| **Technology** | Trench | Advanced trench technology, reducing gate charge and improving efficiency|
| **Operating temperature range** | -55°C to +150°C | Suitable for a wide range of industrial and consumer environments|
---
Domain and module applications：
III. Application fields and module examples of MI8612-VB
1. **Consumer electronics**
- **Battery protection module** for smartphones, tablets, and laptops to ensure safe operation of battery packs.
- In charger modules, it is used for switching circuits to reduce conduction losses and improve charging efficiency.
2. **Motor drive and control**
- It can be used in small motor control modules (such as drones and power tools). The dual-channel design can flexibly control bipolar signals.
- In DC-DC converters, it is used as a synchronous rectifier to improve efficiency and reduce power loss.
3. **Automotive electronics**
- Power management module for **automotive infotainment systems**, providing reliable current control.
- In car chargers (such as USB charging port modules), it is used for protection and current control.
4. **Industrial Control and IoT Devices**
- In **IoT sensor nodes**, it is used to control the power path and improve the standby efficiency of the system.
- In small power control modules of industrial equipment, it supports efficient power switching functions.
5. **LED Lighting**
- In **LED drive circuits**, it is used as a switching element to control the current path to ensure brightness stability and energy efficiency.
**Summary**: The MI8612-VB MOSFET has low on-resistance and good thermal performance, and is suitable for a variety of applications that require efficient power control and compact design, such as consumer electronics, automotive electronics, IoT, and LED driving. Its dual N-type channel structure further enhances application flexibility, making it an ideal choice in a variety of power management modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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