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MI5820-VB Product details

Product introduction:

1. MI5820-VB Product Introduction

MI5820-VB is a **dual N-channel MOSFET** in **DFN8 (5x6-B) package**, designed for high-efficiency and space-saving applications. The device has a **drain-source voltage (VDS)** of 30V, a **gate-source voltage (VGS)** limit of ±20V, and a threshold voltage (Vth) of 1.7V, ensuring efficient switching control capabilities under lower voltage drive. The **on-resistance (RDS(ON))** of MI5820-VB at 4.5V and 10V gate drive is 24mΩ and 18mΩ respectively, ensuring low power consumption and high efficiency performance when conducting high currents. The maximum **drain current (ID)** can reach 22A, making it very suitable for applications requiring high current and low loss. Using **Trench technology**, this MOSFET excels in fast switching and low conduction losses, and is widely used in power management, automotive electronics and consumer electronics.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6)-B Dual-N+N 30V 1.7V 22A 18mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6)-B Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6)-B Dual-N+N 30V 1.7V 22A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6)-B Dual-N+N 30V 1.7V 22A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6)-B Dual-N+N
II. MI5820-VB Detailed Parameters

| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|------------------------------------------|
| **Package** | DFN8 (5x6-B) | Provides compact size and excellent thermal performance|
| **Channel Type** | Dual N-channel | Suitable for current control and switching applications|
| **VDS** | 30V | Suitable for medium voltage load applications|
| **VGS** | ±20V | Flexible drive voltage|
| **Vth (threshold voltage)** | 1.7V | Reliable switching at low voltage|
| **RDS(ON)** | 24mΩ (@VGS=4.5V) | Improve conduction efficiency and reduce power consumption|
| | 18mΩ (@VGS=10V) | Ensure high current conduction capability|
| **ID (maximum drain current)** | 22A | Supports high current applications and meets diverse needs|
| **Technology** | Trench | Optimizes switching performance and reduces power loss|
| **Operating temperature range** | -55°C ~ 150°C | Adapts to various industrial and automotive environments|

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Domain and module applications:

III. MI5820-VB Application Fields and Module Examples

1. **Power Management System**
In power management modules, MI5820-VB is often used as an efficient power switch and rectifier. Its dual N-channel configuration can effectively reduce conduction losses and improve power efficiency, especially suitable for DC-DC converters and synchronous rectification applications.

2. **Automotive Electronics**
This MOSFET performs well in automotive power management and power control systems. It can be used in battery management systems and motor control modules to provide reliable switching performance and high current carrying capacity to meet the automotive requirements for high temperature and high efficiency.

3. **Consumer Electronics**
In consumer electronics such as smartphones and tablets, MI5820-VB is suitable for power switching and charging management modules. Its small package size and low on-resistance characteristics make it very suitable for applications with strict space and efficiency requirements.

4. **LED drive circuit**
MI5820-VB can be used as a switching element in LED drive circuits to help achieve efficient lighting control. Its fast switching characteristics ensure high efficiency and long life of LED lighting, suitable for a variety of lighting applications.

5. **Industrial control system**
In industrial automation equipment, this device can be used as a load switch and protection switch. Its high current capability and low power consumption enable reliable control and protection in motor drive, heating control and other fields.

With its excellent performance, low loss and wide applicability, MI5820-VB has become an indispensable component in the design of efficient electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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