Product introduction：
1. MI5812-VB Product Introduction
MI5812-VB is a high-performance dual N-channel MOSFET designed for power management applications that require low on-resistance and high switching speed. The device uses a DFN8(5X6)-B package with a compact size suitable for high-density circuit board design. Its maximum drain-source voltage (VDS) is 30V, which is suitable for low-voltage applications. At the same time, the maximum gate-source voltage (VGS) is ±20V, providing good operating flexibility. The threshold voltage (Vth) of MI5812-VB is 1.7V, ensuring that it can be turned on quickly at a lower voltage. The MOSFET has an RDS(ON) of 24mΩ (VGS=4.5V) and 18mΩ (VGS=10V), which makes it have extremely low power consumption and heat generation under load. The MI5812-VB has a **maximum continuous drain current (ID) of 22A**, making it ideal for high current applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6)-B |
Dual-N+N |
30V |
|
1.7V |
22A |
|
|
18mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6)-B |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6)-B |
Dual-N+N |
30V |
|
1.7V |
22A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6)-B |
Dual-N+N |
30V |
|
1.7V |
22A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6)-B |
Dual-N+N |
|
|
|
|
|
|
|
2. MI5812-VB Detailed parameter description
- **Model**: MI5812-VB
- **Package**: DFN8(5X6)-B
- **Configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 24mΩ @ VGS = 4.5V
- 18mΩ @ VGS = 10V
- **Maximum continuous leakage current (ID)**: 22A
- **Technology**: Trench
Domain and module applications：
3. Application fields and modules
MI5812-VB MOSFET has a wide range of applications in multiple fields and modules. The following are some typical use cases:
1. **Power management**:
- In switching power supplies (SMPS) and DC-DC converters, MI5812-VB can be used as the main switching element to achieve efficient power conversion and management.
2. **Motor drive**:
- Suitable for motor control circuits, MI5812-VB can be used to drive DC motors and stepper motors to ensure their high efficiency operation under high loads.
3. **Consumer electronics**:
- In portable devices such as laptops, tablets and smartphones, MI5812-VB can be used for power regulation and energy management to provide stable power output.
4. **Automotive Electronics**:
- In the power management systems of electric and hybrid vehicles, MI5812-VB can provide high-efficiency power switches, reduce energy loss and improve system efficiency.
5. **LED Driver**:
- MI5812-VB can be used in high-brightness LED lighting solutions to control current to achieve optimal brightness while reducing heat loss.
The above applications show that MI5812-VB is a powerful and efficient MOSFET suitable for a variety of modern electronic design and power management needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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