Product introduction:
1. MI5411-VB Product Introduction
MI5411-VB is a **single P-channel MOSFET**, packaged in **DFN8 (5x6), designed for applications requiring efficient switching performance and compact size. The device has a **drain-source voltage (VDS)** of -30V, a **gate-source voltage (VGS)** limit of ±20V, and a threshold voltage (Vth) of -2.5V, ensuring switching control capability under lower voltage drive. The **on-resistance (RDS(ON))** of MI5411-VB under 4.5V and 10V gate drive is 12mΩ and 7.8mΩ respectively, ensuring low loss and efficient current conduction. The maximum **drain current (ID)** can reach -60A, making it suitable for medium and high power load requirements. Using advanced **Trench (trench) technology**, this MOSFET has excellent performance in low conduction loss and fast switching performance, and is very suitable for automotive electronics, power management, and industrial control.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-P |
-30V |
|
-2.5V |
-60A |
|
|
7.8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-P |
-30V |
|
-2.5V |
-60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-P |
-30V |
|
-2.5V |
-60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-P |
|
|
|
|
|
|
|
2. MI5411-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|------------------------------------------|
| **Package** | DFN8 (5x6) | Save space and improve thermal management capabilities|
| **Channel type** | Single P-channel | Suitable for efficient current blocking control|
| **VDS** | -30V | Suitable for medium voltage load applications|
| **VGS** | ±20V | Provide flexible drive options|
| **Vth (threshold voltage)** | -2.5V | Support switch control at low voltage|
| **RDS(ON)** | 12mΩ (@VGS=4.5V) | Reduce conduction loss and improve power efficiency|
| | 7.8mΩ (@VGS=10V) | Maintain high current capability, suitable for large load applications|
| **ID (maximum drain current)** | -60A | Supports high current load requirements|
| **Technology** | Trench | Improves switching efficiency and reduces power loss|
| **Operating temperature range** | -55°C ~ 150°C | Suitable for various industrial and automotive environments|
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Domain and module applications:
III. MI5411-VB Application Fields and Module Examples
1. **Power Management System**
In power management modules, MI5411-VB is often used in synchronous rectifiers and reverse protection circuits. Its P-channel configuration simplifies the control logic and can effectively prevent current backflow when the power is off, thereby improving the reliability of the circuit.
2. **Battery Management System (BMS)**
In lithium battery management systems, this MOSFET can be used as a switching element in the battery pack to prevent overcharging or over-discharging of the battery. Low on-resistance and high current capability help reduce system losses and extend battery life.
3. **Automotive Electronics**
MI5411-VB performs well in automotive control modules, such as DC-DC converters, lighting controls, and on-board chargers. It can operate stably in harsh environments and meets the requirements of automotive electronics for high temperature and high reliability.
4. **Industrial Control Systems**
In industrial automation equipment, the device is suitable for load switching and reverse current protection. Its current capability of up to -60A ensures excellent performance in motor drive and high-current switching scenarios.
5. **Consumer Electronics and Communication Equipment**
In consumer electronics such as laptops and routers, MI5411-VB can be used in power switching modules and standby mode circuits to achieve low-power design. Its small package size is suitable for space-constrained applications.
With its excellent switching performance, low loss and high reliability, MI5411-VB shows wide applicability in various fields and is an ideal choice for developing high-efficiency electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours