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MI5405-VB Product details

Product introduction:

MI5405-VB Product Introduction

MI5405-VB is a high-performance single P-Channel MOSFET in a DFN8(5X6) package, designed for applications requiring high efficiency and compact layout. The device has a drain-to-source voltage (VDS) of -30V, a maximum gate-source voltage (VGS) of ±20V, and a low threshold voltage (Vth) of -2.5V. With its advanced Trench technology, the MI5405-VB provides excellent on-resistance performance of 12mΩ and 7.8mΩ respectively, and supports leakage currents up to -60A at different gate-source voltages. This makes the MI5405-VB ideal for power management, switch control, and other electronic circuits that require high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-P -30V -2.5V -60A 7.8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-P -30V -2.5V -60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-P -30V -2.5V -60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-P
Detailed parameter description

- **Model**: MI5405-VB
- **Package**: DFN8(5X6)
- **Configuration**: Single-P-Channel
- **Drain to Source Voltage (VDS)**: -30V
- **Gate to Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 12mΩ @ VGS = 4.5V
- 7.8mΩ @ VGS = 10V
- **Maximum Drain Current (ID)**: -60A
- **Technology**: Trench

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Domain and module applications:

Applications and module examples

1. **Power management**
MI5405-VB is very effective in switching power supplies and DC-DC converters. Its high current carrying capacity and low on-resistance help improve power efficiency and are suitable as efficient switching devices in power modules.

2. **Battery Management System (BMS)**
In battery management applications, MI5405-VB can be used for battery charge and discharge control. Due to its excellent conduction performance and voltage resistance, it is particularly suitable for battery management in electric vehicles and renewable energy systems.

3. **Load switch**
MI5405-VB can be used in a variety of load switching circuits, providing reliable switching functions, suitable for home appliances and industrial equipment. Its excellent power consumption performance makes it an efficient choice.

4. **LED drive circuit**
This MOSFET can be used in LED drive circuits to support stable current output, suitable for commercial lighting, automotive lighting and other lighting applications to achieve higher energy efficiency and longer service life.

5. **Consumer electronics**
In various consumer electronics products, MI5405-VB can effectively control power switches, such as smartphones, tablets and other portable devices, to ensure high performance and extend battery life.

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In summary, MI5405-VB single P-Channel MOSFET is widely used in power management, load switching and LED driving with its high efficiency and versatility, providing stable and efficient solutions for various electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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