Product introduction:
1. MI4822-VB Product Introduction
MI4822-VB is a high-efficiency dual N-channel MOSFET in a SOP8 package, developed for applications that require compact design and high performance. It has a drain-source voltage (VDS) of 30V and can support gate-source voltages (VGS) up to ±20V, ensuring high design flexibility. The device has a threshold voltage (Vth) of 1.7V, enabling it to operate effectively at lower drive voltages. Its on-resistance (RDS(ON)) is 20mΩ and 16mΩ at gate drive voltages of 4.5V and 10V, respectively. This low value can effectively reduce conduction losses and improve the overall efficiency of the system. The maximum drain current (ID) is 8.5A, making it suitable for a variety of high-power applications. MI4822-VB adopts advanced trench technology and performs well at high switching frequencies. It is widely used in power management, automotive electronics, consumer electronics and other fields.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
|
16mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
8.5A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
2. MI4822-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------|------------------------------------------|
| **Package** | SOP8 | Suitable for highly integrated circuits, saving space|
| **Channel type** | Dual N-channel | Provide efficient switching control|
| **VDS** | 30V | Upper limit of drain-source voltage, suitable for medium and low voltage applications|
| **VGS** | ±20V | Gate-source voltage range, providing flexibility|
| **Vth (threshold voltage)** | 1.7V | Ensure fast response and improve switching efficiency|
| **RDS(ON)** | 20mΩ (@VGS=4.5V) | Improve current efficiency and reduce losses|
| | 16mΩ (@VGS=10V) | Maintain low on-resistance at high voltage|
| **ID (maximum drain current)** | 8.5A | Support high current load, suitable for a variety of applications|
| **Technology** | Trench | Improve switching efficiency and reduce power consumption|
| **Operating temperature range** | -55°C ~ 150°C | Meet working requirements in various environments|
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Domain and module applications:
3. MI4822-VB Application Fields and Module Examples
1. **Power Management System**
MI4822-VB is widely used in switching power supplies (SMPS) and DC-DC converters, which can effectively control current and voltage, improve power efficiency and reduce energy consumption. Its low on-resistance design enables lower power consumption and higher energy efficiency under high load conditions.
2. **LED Drive Circuit**
In LED lighting applications, this MOSFET can effectively drive high-power LEDs as a switching element, providing stable brightness and longer service life. At the same time, low on-resistance helps reduce heat generation and improve system reliability.
3. **Automotive Electronics**
MI4822-VB is suitable for various electronic control modules in automobiles, such as motor control and lighting systems. It can withstand the high temperature and vibration of the automotive environment to ensure long-term reliable operation.
4. **Consumer Electronics**
In smartphones, tablets and other portable devices, this MOSFET can be used in power management modules to help achieve low-power standby modes and efficient charging solutions.
5. **Industrial Control Systems**
In automation equipment and control systems, MI4822-VB can be used as a switching element for motor drive and load control to ensure efficient working performance and reliability.
6. **Communication Equipment**
In wireless communication and base station equipment, MI4822-VB can be used as an efficient switch to improve the efficiency of signal processing and power conversion and ensure stable operation of the equipment.
Through its excellent performance, MI4822-VB has shown a wide range of application potential in many fields, making it an ideal choice for designers to develop high-efficiency electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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