Product introduction：
ME80N75AT-VB Product Introduction
ME80N75AT-VB is a high-efficiency single N-channel MOSFET in TO220 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is 80V, and it supports a gate-source voltage (VGS) of ±20V, making it an excellent performer in a variety of power electronic devices. The device's threshold voltage (Vth) is 3V, ensuring that it can respond quickly to control signals. The on-resistance (RDS(ON)) of the ME80N75AT-VB is only 7mΩ at a VGS of 10V, which gives it extremely low energy loss during switching and is suitable for high-efficiency applications.
This MOSFET uses Trench technology and has excellent thermal performance and durability, enabling it to withstand higher currents (ID up to 100A), making it suitable for a variety of high-power and high-efficiency power management solutions.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
100A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
ME80N75AT-VB Detailed parameter description
| **Parameter** | **Description** |
|-------------------------|-----------------------------|
| **Package** | TO220 |
| **Configuration** | Single N-channel|
| **Maximum drain-source voltage (VDS)** | 80V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 9mΩ (VGS = 4.5V) |
| **On-resistance (RDS(ON))** | 7mΩ (VGS = 10V) |
| **Maximum leakage current (ID)** | 100A |
| **Technology** | Trench |
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Domain and module applications：
Applications and modules
ME80N75AT-VB is suitable for the following fields due to its excellent performance and wide range of application scenarios:
1. **Power management**
This MOSFET performs well in switching power supplies (SMPS), DC-DC converters and other power management systems. The low on-resistance ensures efficient conversion of power and reduces energy loss.
2. **Motor control**
ME80N75AT-VB can be used in motor drive applications, supports high current requirements, and can provide smooth current control during startup and operation. It is suitable for industries, home appliances and automobiles.
3. **Inverter**
This device has excellent performance in solar inverters and other types of inverters, which can effectively manage power, improve the overall efficiency of the system and ensure reliability.
4. **Battery Management System**
In the battery management system (BMS), ME80N75AT-VB can be used as a switch in the charging and discharging process, supporting the safety and efficiency of the battery, especially suitable for electric vehicles and energy storage applications.
5. **Industrial Control**
Due to its high current carrying capacity, ME80N75AT-VB is suitable for various industrial control systems to ensure stable operation of equipment under high load conditions and meet the requirements of modern industry for high efficiency and high reliability.
With its high voltage and high current characteristics, ME80N75AT-VB has become an ideal choice for high-efficiency power supply and switching applications, which can meet the needs of a variety of industrial and consumer electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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