Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Half-Bridge-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Half-Bridge-N+N |
30V |
|
1.7V |
8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Half-Bridge-N+N |
|
|
|
|
|
|
|
II. ME4932-VB MOSFET Detailed Parameters
| **Parameter** | **Value** | **Description** |
|------------------------|--------------------------------|----------------------------------------------|
| **Package Type** | SOP8 | Compact package, suitable for high-density PCB layout|
| **MOSFET Type** | Half-Bridge N+N-Channel | Suitable for efficient current control and switch management|
| **Drain-Source Voltage (V_DS)** | 30V | Maximum Tolerable Drain-Source Voltage|
| **Gate-Source Voltage (V_GS)** | ±20V | Gate control voltage range to ensure stable operation of MOSFET|
| **Turning On Voltage (V_th)** | 1.7V | MOSFET starts to conduct at 1.7V|
| **On-Resistance (R_DS(ON))** | 12mΩ @ V_GS=4.5V | On-resistance at 4.5V gate-source voltage|
| **On-resistance (R_DS(ON))** | 8mΩ @ V_GS=10V | On-resistance at 10V gate-source voltage|
| **Maximum drain current (I_D)** | 8A | Maximum drain current that can be carried|
| **Technology** | Trench | Improve conductivity and reduce switching losses|
---
Domain and module applications:
3. Application fields and module examples of ME4932-VB
1. **Power management**
ME4932-VB is very suitable for **power management** systems, especially in DC-DC converters. Its low on-resistance (8mΩ @ V_GS=10V) can effectively reduce energy loss and improve system efficiency during high-frequency switching, thereby providing better performance in various power electronics applications.
2. **Motor drive**
The half-bridge configuration of this MOSFET makes it perform well in **motor drive** applications, and is suitable for control of brushless DC motors (BLDC) and stepper motors. ME4932-VB can switch current in an efficient manner, thereby achieving efficient motor control, and is widely used in electric vehicles and industrial automation equipment.
3. **High-efficiency switching power supply**
The excellent characteristics of ME4932-VB make it an ideal choice in **switching power supply** modules. Its high drain current capability and low on-resistance can effectively handle high power output and meet the stringent requirements for stability and reliability, making it particularly suitable for consumer electronics, computer power supplies, and server power supplies.
4. **Audio Amplifier**
In high-fidelity **audio amplifiers**, the ME4932-VB can also be used as a switching element in the output stage. Its fast switching characteristics and low heat dissipation characteristics help improve the clarity and sound quality of audio signals, and are widely used in home audio systems and professional audio equipment.
Through these applications, the ME4932-VB demonstrates its wide applicability in power management, motor drives, and high-efficiency switching power supplies, becoming an important component of efficient power electronics systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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