Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
80A |
|
|
6mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
2. ME45N03T-G-VB MOSFET Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|-------------------------------|----------------------------------------------|
| **Package type** | TO220 | Standardized package for easy heat dissipation and PCB mounting|
| **MOSFET type** | Single-N-Channel | Suitable for low-side switching and efficient power conversion|
| **Drain-source voltage (V_DS)** | 30V | Maximum tolerable drain-source voltage|
| **Gate-source voltage (V_GS)** | ±20V | Gate control voltage range to ensure stable operation of MOSFET|
| **Turning on voltage (V_th)** | 1.7V | MOSFET starts to turn on at 1.7V|
| **On-resistance (R_DS(ON))** | 9mΩ @ V_GS=4.5V | On-resistance at 4.5V gate-source voltage|
| **On-resistance (R_DS(ON))** | 6mΩ @ V_GS=10V | On-resistance at 10V gate-source voltage|
| **Maximum drain current (I_D)** | 80A | Maximum drain current that can be carried|
| **Technology** | Trench | Improve conductivity and reduce switching losses|
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Domain and module applications:
3. Application fields and module examples of ME45N03T-G-VB
1. **Power converter**
ME45N03T-G-VB is widely used in **switching power supplies** and **DC-DC converters**. Its drain current capability of up to 80A and low on-resistance (6mΩ @ V_GS=10V) make it an ideal choice for improving conversion efficiency and reducing power consumption. This feature is essential for applications requiring efficient power management.
2. **Motor drive**
This MOSFET can be used in **motor drive circuits**, such as DC motor and stepper motor control. In motor control, ME45N03T-G-VB provides stable high current to ensure efficient performance of the motor during startup and operation, and is particularly suitable for equipment such as power tools and robots.
3. **High-side switch**
In **high-side switch applications**, this MOSFET can efficiently control loads, such as in home appliances, LED drivers, and lighting control systems. Its excellent thermal performance and switching characteristics make circuit design simpler and more reliable, which can effectively extend the service life of the equipment.
4. **Consumer Electronic Devices**
ME45N03T-G-VB also plays an important role in **consumer electronic devices**, especially in power management modules in portable devices such as smartphones and tablets. Its high performance and compact packaging make it an ideal choice in modern devices, meeting the needs of fast charging and efficient energy management.
Through these applications, ME45N03T-G-VB demonstrates its wide applicability in power conversion, high-side switching and motor drive, and is an important component for realizing efficient power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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