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ME2N7002E-VB Product details

Product introduction:

1. ME2N7002E-VB MOSFET Product Introduction
ME2N7002E-VB is a **single N-channel field effect transistor (MOSFET)** in **SOT23-3 package**, with **60V drain-source voltage (V\_DS)** and **±20V gate-source voltage (V\_GS)**, manufactured using **Trench technology**. This MOSFET has low on-resistance and good switching performance, suitable for a variety of low-power applications, especially in portable devices and power management systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 60V 20(±V) 1.7V 0.3A 2800mΩ
2. ME2N7002E-VB MOSFET Detailed parameter description

| **Parameter** | **Value** | **Description** |
|------------------------|-------------------------------|------------------------------------------------|
| **Package type** | SOT23-3 | Small package, suitable for high-density circuit board design|
| **MOSFET type** | Single-N-Channel | Suitable for low-power switching and control applications|
| **Drain-source voltage (V\_DS)** | 60V | Maximum tolerable drain-source voltage|
| **Gate-source voltage (V\_GS)** | ±20V | Maximum gate control voltage to ensure stable operation of the device|
| **Turning on voltage (V\_th)** | 1.7V | 1.7V gate voltage is required for the MOSFET to start turning on|
| **On-resistance (R\_DS(ON))** | 3100mΩ @ V\_GS=4.5V | On-resistance at 4.5V gate-source voltage|
| **On-resistance (R\_DS(ON))** | 2800mΩ @ V\_GS=10V | On-resistance at 10V gate-source voltage|
| **Maximum drain current (I\_D)** | 0.3A | Maximum current that can be carried under specific operating conditions|
| **Technology** | Trench | Improve conduction capability and reduce switching losses|

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Domain and module applications:

III. Application fields and module examples of ME2N7002E-VB

1. **Portable devices**
ME2N7002E-VB is very suitable for switching circuits in **portable electronic devices** (such as smartphones, tablets, etc.). Due to its small SOT23-3 package and low power consumption, this MOSFET can effectively control power management, achieve efficient battery utilization and extend the battery life of the device.

2. **Power management system**
In the **power management module**, ME2N7002E-VB can be used as a load switch to control and protect the load. Its high drain-source voltage (60V) and good conduction characteristics make it suitable for various power modules to ensure the stability and safety of the system.

3. **Switching circuit**
This MOSFET is also widely used in **switching circuits**. It can be used to control LED lighting, relay drivers and other low-power devices. Its low on-resistance (2.8Ω @ V\_GS=10V) ensures energy efficiency during switching operations and reduces heat loss.

4. **Sensors and interface circuits**
ME2N7002E-VB can be used as a switch in **sensors and interface circuits** to control the transmission and processing of signals. Its fast response characteristics and low power consumption make it very suitable for applications that require efficient control, such as signal processing of temperature sensors and light sensors.

Through the above application examples, ME2N7002E-VB demonstrates its flexibility and efficiency in **miniaturization and low power consumption applications**, becoming an important component in the field of power management and switch control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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