Product introduction：
1. ME2N7002D-VB Product Introduction
ME2N7002D-VB is a **Single-N-Channel** MOSFET in **SOT23-3 package**, specially designed for low-power switching applications. Its maximum **drain-source voltage (VDS) is 60V**, and it operates within the gate-source voltage (VGS) range of ±20V, which is suitable for a variety of power management applications. The device has a low threshold voltage (**Vth**) of 1.7V, ensuring startup at a lower voltage. Its on-resistance (**RDS(ON)**) is 3100mΩ and 2800mΩ at a gate drive voltage of 4.5V and 10V, respectively, showing good conductivity, and is very suitable for switch control of various electronic devices. ME2N7002D-VB adopts **Trench technology**, with excellent switching characteristics and high efficiency, suitable for applications requiring fast response.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
|
2800mΩ |
|
2. ME2N7002D-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|----------------------|------------------------------|--------------------------------------------|
| **Package** | SOT23-3 | Small surface mount package, suitable for circuit design with limited space|
| **Channel type** | Single-N-Channel | Suitable for low-side switch applications|
| **VDS** | 60V | Drain-source voltage, maximum support 60V |
| **VGS** | ±20V | Gate-source voltage range|
| **Vth (threshold voltage)** | 1.7V | Minimum gate voltage required to turn on the MOSFET|
| **RDS(ON)** | 3100mΩ (@VGS=4.5V) | On-resistance at 4.5V gate drive voltage|
| | 2800mΩ (@VGS=10V) | On-resistance at 10V gate drive voltage|
| **ID (maximum drain current)**| 0.3A | Maximum continuous current under specified conditions|
| **Technology** | Trench | Provides lower on-resistance and fast switching capability|
| **Application temperature range** | -55°C ~ 150°C | Suitable for a variety of industrial and consumer electronic environments|
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Domain and module applications：
3. ME2N7002D-VB Application Fields and Module Examples
1. **Portable Electronic Devices**
ME2N7002D-VB is very suitable for power switches in smartphones, tablets and other portable devices. It can switch quickly in energy-saving mode to improve battery efficiency.
2. **Power Management Module**
This MOSFET can be used in power management ICs. As a switching element, it effectively adjusts the output voltage and current to ensure stable operation of the system. It is widely used in computers and other electronic devices.
3. **LED Drive Circuit**
In the LED drive circuit, ME2N7002D-VB can be used as a load switch to control the on and off of the LED. It is suitable for lighting equipment and display screens.
4. **Small Motor Control**
This type of MOSFET can be used in motor control circuits. By accurately controlling the current to adjust the speed of small motors, it is suitable for applications such as toys, household appliances and small robots.
5. **Signal switch**
In wireless communication and sensor applications, ME2N7002D-VB can be used as a signal switch to quickly respond to signal switching requirements and improve system flexibility and response speed.
With its excellent performance, ME2N7002D-VB occupies an important position in the design of modern electronic products and is suitable for a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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