Product introduction:
Product Introduction: MDP1932TH-VB MOSFET
MDP1932TH-VB is a high-performance single N-channel MOSFET in TO220 package, designed for high current and high efficiency applications. Its maximum drain-source voltage (VDS) is 80V, gate-source voltage (VGS) is ±20V, and turn-on voltage is 3V. This MOSFET has an extremely low on-resistance (RDS(ON)), which is 3.6mΩ at VGS=4.5V and 3mΩ at VGS=10V, and supports a maximum drain current of 195A, making it suitable for various high-power switching applications, especially in the fields of power management and motor drive.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
195A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
195A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
80V |
|
3V |
195A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package type**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- When VGS = 4.5V: 3.6mΩ
- When VGS = 10V: 3mΩ
- **Maximum drain current (ID)**: 195A
- **Technology type**: Trench structure
- **Power dissipation (Pd)**: 100W
- **Operating temperature range**: -55°C to 150°C
- **Pin configuration**: 3-pin
Domain and module applications:
Applications and module examples:
1. **Power Management**:
The MDP1932TH-VB is ideal for use in efficient power management modules, especially in DC-DC converters. Its low on-resistance and high current carrying capacity can effectively reduce energy loss and improve overall power conversion efficiency, making it suitable for high-performance computing, server power supplies, and battery management systems.
2. **Motor Drive**:
This MOSFET can be widely used in motor drive circuits such as industrial motors, robots, and electric vehicle drive systems. Due to its high current carrying capacity, it can provide a stable current during instantaneous load changes, ensuring fast response and efficient operation of the motor.
3. **Switching Power Supply (SMPS)**:
The MDP1932TH-VB can be used in efficient switching power supply designs, especially in applications that need to handle high power. Its low on-resistance minimizes energy loss during high-voltage and high-frequency switching operations, improving the overall efficiency of the switching power supply.
4. **LED driver**:
In LED driver applications, this MOSFET can be used for constant current driving of high-brightness LEDs. Its high current carrying capacity and high efficiency characteristics ensure the stability and long life of the LED system, and is suitable for commercial lighting and outdoor lighting equipment.
5. **Radio frequency amplifier**:
MDP1932TH-VB is also widely used in radio frequency (RF) amplifiers. Its good switching characteristics and high current capability enable it to efficiently drive RF loads, making it suitable for communication equipment and signal amplifiers.
Through the above application examples, the MDP1932TH-VB MOSFET shows its wide applicability in a variety of high-power and high-efficiency fields, and is an important and efficient switching element in electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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