Product introduction：
Product Introduction: MC2435-VB MOSFET
MC2435-VB is a high-performance dual N+P channel MOSFET, which adopts DFN6(2x2)-B package and is designed for miniaturized and high-efficiency electronic applications. Its maximum drain-source voltage (VDS) is ±30V, which is suitable for bipolar circuit design and can meet the needs of various low-voltage applications. The gate-source voltage (VGS) of this product is rated at ±20V, and the turn-on voltage (Vth) is 1.6V (N channel) and -1.7V (P channel), respectively, with fast response capability. At VGS=4.5V, the on-resistance (RDS(ON)) of the N channel is 24mΩ and that of the P channel is 40mΩ; at VGS=10V, the RDS(ON) of the N channel is 18mΩ and that of the P channel is 32mΩ. These characteristics make the MC2435-VB perform well under high current and high-efficiency conditions, and it is widely used in various power management and signal switching applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
|
18/32mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN6(2X2)-B |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±7A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN6(2X2)-B |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package type**: DFN6(2x2)-B
- **Configuration**: Dual N+P channel
- **Maximum drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**:
- N channel: 1.6V
- P channel: -1.7V
- **On-resistance (RDS(ON))**:
- N channel:
- 24mΩ @ VGS=4.5V
- 18mΩ @ VGS=10V
- P channel:
- 40mΩ @ VGS=4.5V
- 32mΩ @ VGS=10V
- **Maximum drain current (ID)**: ±7A
- **Technology type**: Trench technology
- **Operating temperature range**: -55°C ~ 150°C
Domain and module applications：
Applications and module examples:
1. **Power management and conversion**:
MC2435-VB is used as a switch and load controller in power management systems, suitable for DC-DC converters and power adapters. Its dual N+P configuration allows for more flexible power design, improving conversion efficiency and stability.
2. **Motor control**:
In motor control applications, MC2435-VB can efficiently control the start, stop and speed regulation of motors. The bipolar characteristics make it possible to simplify circuit design, improve system response speed and reliability, and are widely used in home appliances and industrial equipment.
3. **LED drive and lighting**:
This MOSFET is also suitable for LED drive circuits, which can efficiently control the switching and dimming of LEDs. Its low on-resistance characteristics ensure that energy loss is minimized under high current conditions, improving the energy efficiency of the overall lighting system.
4. **Communication equipment**:
In communication equipment, MC2435-VB can be used for signal switching and processing circuits. Its high frequency characteristics and stability enable it to perform well in wireless communication and data transmission systems, providing reliable control for signal transmission.
Through its excellent electrical performance and a wide range of application scenarios, the MC2435-VB MOSFET provides strong support for various high-efficiency electronic products and promotes technological development and innovation in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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