Product introduction：
1. LBSS138LT1G-VB MOSFET Product Introduction
The LBSS138LT1G-VB is a high-performance single N-channel MOSFET in a SOT23-3 package, designed for space-limited applications. Its drain-source voltage (VDS) can reach up to 60V, suitable for medium and high voltage power management circuits. The device has a gate-source voltage (VGS) range of ±20V, ensuring stable operation under various operating conditions. The turn-on threshold voltage (Vth) is 1.7V, which enables it to turn on quickly at a lower gate voltage, thereby improving the response speed of the overall system. Although the on-resistance (RDS(ON)) of the LBSS138LT1G-VB is 3100mΩ at VGS of 4.5V and 2800mΩ at VGS of 10V, its small SOT23-3 package makes it extremely flexible in a variety of applications. The maximum drain current (ID) of this MOSFET is 0.3A, suitable for low-power switching power supplies and signal conditioning applications. LBSS138LT1G-VB is widely used in consumer electronics, portable devices and communication equipment.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
|
2800mΩ |
|
2. LBSS138LT1G-VB MOSFET detailed parameter description
- **Package type**: SOT23-3
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Turning threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ@VGS=4.5V
- 2800mΩ@VGS=10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench technology
- **Power dissipation**: The maximum power dissipation capability is usually around 200mW. For specific values, please refer to the thermal characteristics table.
- **Operating temperature range**: -55°C to 150°C, please refer to detailed technical documents for specific values.
- **Number of package pins**: 3 pins
Domain and module applications：
III. Application fields and examples of applicable modules of LBSS138LT1G-VB MOSFET
1. **Consumer electronics**
LBSS138LT1G-VB is widely used in various consumer electronic devices, such as smartphones, tablets and portable audio. Its compact package and efficient switching characteristics make it very suitable for power management, charging circuits and signal amplification applications, helping to improve the endurance and overall performance of the device.
2. **Portable devices**
This MOSFET is suitable for power switching and control circuits of various portable devices. Its low power consumption and small size make it possible to achieve efficient power management in a limited space, and it is suitable for Bluetooth headsets, portable game consoles and small smart home devices.
3. **Communication equipment**
LBSS138LT1G-VB is also widely used in communication equipment, such as routers, switches and signal amplifiers. It can effectively manage the switching of signal paths, thereby enhancing the stability and response speed of the device and ensuring reliable data transmission.
4. **Power Management Module**
In the power management module, LBSS138LT1G-VB is used in the control circuit of DC-DC converters and linear regulators. Its high switching frequency and low on-resistance enable it to achieve high-efficiency conversion while reducing heat generation, making it suitable for high-performance power solutions.
In summary, LBSS138LT1G-VB MOSFET provides a reliable solution for modern electronic products with its excellent electrical performance, compact packaging and wide applicability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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