Product introduction:
Product Introduction - L2SK801LT1G-VB
L2SK801LT1G-VB is a low-power single N-channel MOSFET in a compact SOT23-3 package, suitable for low-voltage, low-current applications. Its maximum drain-source voltage (VDS) is 60V, the gate voltage (VGS) is ±20V, and the threshold voltage (Vth) is 1.7V. The on-resistance of this MOSFET is 2800mΩ at a VGS of 10V, which has a high on-resistance and is suitable for low-power applications. Its maximum drain current (ID) is 0.3A, and the use of Trench technology optimizes the switching performance and efficiency of the device, making it suitable for portable devices and other applications that require miniaturized, low-power solutions.
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Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-N |
60V |
20(±V) |
1.7V |
0.3A |
|
|
2800mΩ |
|
Detailed parameter description
1. **Device configuration:**
- Configuration: Single N-channel
- Package type: SOT23-3
2. **Electrical parameters:**
- Drain-source voltage (VDS): 60V
- Gate voltage (VGS): ±20V
- Threshold voltage (Vth): 1.7V
3. **On-resistance:**
- RDS(ON) = 3100mΩ @ VGS = 4.5V
- RDS(ON) = 2800mΩ @ VGS = 10V
4. **Current capability:**
- Maximum drain current (ID): 0.3A
5. **Technology:**
- Technology type: Trench technology
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Domain and module applications:
Applications and Module Examples
1. **Portable Electronic Devices: **
- The L2SK801LT1G-VB is suitable for portable electronic devices such as smartphones, handheld devices and wearable devices due to its low power consumption and small package. Its high on-resistance limits its power handling capability, so it is more suitable for low-current signal switches or small drive circuits.
2. **Battery Management System: **
- This MOSFET is suitable for small battery management modules to control current paths or manage battery charge and discharge. Its low power consumption characteristics and small package can effectively save circuit board space and is suitable for the design of lightweight devices.
3. **Sensor Drive and Control Circuits: **
- In various sensor drive circuits, the L2SK801LT1G-VB can be used as a signal amplifier or a low-power switching element, and is suitable for low-power signal processing circuits such as temperature, pressure and optical sensors.
4. **Micropower Switching Power Supply: **
- The device can also be used in micropower switching power supplies or DC-to-DC converters to optimize circuit efficiency at low currents and help save power, thereby extending battery life.
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The L2SK801LT1G-VB is designed for low-current, low-power applications and is suitable for power-sensitive scenarios such as portable devices, battery management, and micropower systems, meeting the needs of modern electronic devices for miniaturized, low-power components.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours