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L2SK3019LT1G-VB Product details

Product introduction:

1. L2SK3019LT1G-VB Product Introduction

L2SK3019LT1G-VB is a small package single-channel N-type MOSFET, using SOT23-3 package, suitable for low power and low current applications. The device has a maximum drain-source voltage (VDS) of 60V and a drain current (ID) of 0.3A. It uses advanced trench technology to achieve lower on-resistance, but it is mainly aimed at low power applications. Its on-resistance is 3100mΩ@VGS = 4.5V and 2800mΩ@VGS = 10V, which is very suitable for current control and switching circuits in portable devices. The threshold voltage (Vth) of L2SK3019LT1G-VB is 1.7V, which can be turned on at a lower gate-source voltage.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 60V 20(±V) 1.7V 0.3A 2800mΩ
2. L2SK3019LT1G-VB Detailed parameter description

- **Package type**: SOT23-3
- **Channel configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.3A
- **Technology type**: Trench technology (Trench)
- **Power loss (Ptot)**: Based on heat dissipation design, the typical power is about hundreds of milliwatts
- **Operating temperature range**: -55°C to 150°C
- **Quiescent Current (IDSS)**: Very low leakage current, suitable for low power applications

Domain and module applications:

3. L2SK3019LT1G-VB Application Fields and Module Description

1. **Portable Electronic Devices**
L2SK3019LT1G-VB is ideally suited for portable electronic devices such as smartphones, tablets, and power management modules in wearable devices due to its small package and low current capability. These devices require low power and small size components to optimize battery life and device performance.

2. **Signal Switching Circuit**
This MOSFET can be used in signal switching circuits to control the switching of small current signals. It can provide reliable current control and switching functions in radio frequency devices, sensor modules, and microcontroller interface circuits.

3. **Power Control Applications**
L2SK3019LT1G-VB can be used in low-power power control applications such as USB power interfaces, charging circuits, and low-power switching power supplies. Its higher drain-source voltage (60V) makes it perform well in some scenarios that require power isolation or protection, especially in applications that require efficient control of small currents.

4. **Industrial Automation and Monitoring Systems**
In industrial automation and monitoring systems, the L2SK3019LT1G-VB can be used as a low-power current control device to regulate the operation of low-power sensors or actuators. It can act as a key switching element in low-power modules of monitoring and control systems.

In summary, the L2SK3019LT1G-VB is a small MOSFET that is very suitable for portable devices, signal switching, and low-power power supply control applications. It is widely used in low-power electronic modules and equipment due to its low power consumption and small package.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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