Product introduction:
K58E06N1-VB MOSFET Product Introduction:
K58E06N1-VB is a high-efficiency single N-channel MOSFET in TO220 package, designed for applications with high current requirements, and can withstand a drain-to-source voltage (VDS) of 60V. Its gate-to-source voltage (VGS) is ±20V and its threshold voltage (Vth) is 3V. When VGS is 10V, the device has an on-resistance (RDS(ON)) of only 3mΩ and can support a continuous drain current (ID) of up to 210A, suitable for high-power current handling and switching circuits. Using advanced Trench technology, K58E06N1-VB can provide lower conduction losses and higher efficiency, especially for applications requiring high efficiency and low heat loss.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
210A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
210A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
210A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
1. **Package:** TO220 – Excellent heat dissipation capability, suitable for high power and high current applications.
2. **Configuration:** Single N-channel – Used in various switching circuits, power regulation and drive circuits.
3. **VDS (Drain to Source Voltage):** 60V – Suitable for low to medium voltage applications.
4. **VGS (Gate to Source Voltage):** ±20V – Provides flexible gate drive control.
5. **Vth (Threshold Voltage):** 3V – Low start-up threshold, suitable for different control systems.
6. **RDS(ON) (On-Resistance):**
- 9mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V – Extremely low on-resistance, ensuring high efficiency and low loss.
7. **ID (Continuous Drain Current):** 210A – Extremely high current capability, suitable for high power applications.
8. **Technology:** Trench – Provides lower conduction losses, suitable for high frequency switching and high efficiency applications.
Domain and module applications:
Application Examples:
The K58E06N1-VB MOSFET is well suited for the following applications with its high current handling capability and low on-resistance:
- **Electric Vehicles and Battery Management Systems:** In the battery management system of electric vehicles, this MOSFET can be used in power management, charge control, and inverter circuits to ensure high efficiency and low heat loss during battery charging and discharging.
- **Power Management Modules (DC-DC Converters):** The K58E06N1-VB can be used in efficient DC-DC converters to provide high current output while reducing conversion losses, especially suitable for server and data center power supply systems.
- **Industrial Motor Control:** Suitable for drive and control systems of large motors in industrial environments. The device can withstand high current loads to ensure stable and efficient operation of the motor.
- **Solar Inverters:** In solar inverters, the K58E06N1-VB can be used to efficiently convert DC to AC, improve system energy efficiency, reduce heat generation, and increase the life of the overall power management system.
- **Power Tools and Consumer Electronics:** This MOSFET is suitable for power tools and other consumer electronic devices that require high current output, providing high power while ensuring low power consumption and high efficiency.
In summary, the K58E06N1-VB MOSFET is suitable for many high-power and high-efficiency applications such as electric vehicles, industrial motors, solar inverters, power management systems, etc. with its strong current handling capability, low conduction loss and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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