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K2866-VB Product details

Product introduction:

K2866-VB MOSFET Product Introduction

K2866-VB is a high voltage N-channel power MOSFET in TO220 package based on advanced Super Junction SJ_Multi-EPI technology. This MOSFET has an extremely high breakdown voltage (VDS) of 650V and is suitable for applications requiring high voltage resistance. Its drain current (ID) can reach up to 9A, and the on-resistance (RDS(ON)) at a gate voltage of 10V is 500mΩ, providing lower conduction losses. The design of K2866-VB enables it to perform well in high voltage, high-efficiency power management and conversion applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 9A 500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package type**: TO220
- **Configuration**: Single channel N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Throughput voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI (Super Junction Multiple Epitaxial Layer)
- **Operating temperature range**: -55°C to 150°C
- **Package characteristics**: TO220 package has good heat dissipation performance and is suitable for high power and high voltage applications.

Domain and module applications:

Applications and modules

1. **High-voltage power management**:
K2866-VB is very suitable for **high-voltage switching power supplies (SMPS)** and **high-efficiency AC-DC converters**. Its high withstand voltage characteristics ensure stable operation in high-voltage environments, and is suitable for power modules in industrial equipment and communication systems, providing high-efficiency and low-energy power conversion.

2. **Lighting systems**:
Due to its high voltage and efficient conduction performance, K2866-VB can be used in lighting equipment such as **LED drivers** and **electronic ballasts**. Its low RDS(ON) ensures that power loss is minimized during long-term operation, and is suitable for lighting equipment that requires stable current output.

3. **Industrial automation and control**:
In the field of industrial automation, this MOSFET can be used in **motor control systems**, **inverters**, and **industrial power modules**. Its high voltage tolerance and low on-resistance enable it to effectively control the switching operation in high-power devices, improving the efficiency and safety of the system.

4. **Photovoltaic inverter**:
K2866-VB can also be used in renewable energy systems such as **photovoltaic inverter**, and its high breakdown voltage ensures safe operation in high-voltage environments. The low loss characteristics of MOSFET also help to improve the energy conversion efficiency of photovoltaic systems and adapt to the fluctuating current input of photovoltaic power generation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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