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K2664-VB Product details

Product introduction:

1. K2664-VB MOSFET Product Introduction
K2664-VB is a high voltage single channel N-type MOSFET in TO220 package, designed for high voltage applications. Its drain-source voltage (VDS) is as high as 900V, which enables it to operate reliably in harsh power environments and is suitable for applications requiring high withstand voltage and low on-resistance. The device has a gate-source voltage (VGS) of ±30V and a turn-on voltage (Vth) of 3.5V. At VGS of 10V, the on-resistance (RDS(ON)) of K2664-VB is 1500mΩ and the maximum drain current (ID) is 5A. Manufactured using SJ_Multi-EPI technology, this MOSFET has excellent conductivity and thermal properties and is suitable for high-efficiency and high-reliability power management systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 900V 3.5V 5A 1500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 900V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 900V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. K2664-VB MOSFET Detailed parameter description
- **Package form**: TO220
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Throw-on voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- When VGS = 10V: 1500mΩ
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI
- **Operating temperature range**: -55°C to 150°C
- **Input capacitance (Ciss)**: about 1200pF (typical value)
- **Maximum power consumption**: about 2.5W (typical value)
- **Package pins**:
- Pin 1: Source
- Pin 2: Drain
- Pin 3: Gate

Domain and module applications:

3. K2664-VB Application Fields and Module Examples

1. **High-voltage power converter**: K2664-VB is suitable for high-voltage DC-DC converters and AC-DC power adapters. In these applications, its high drain-source voltage capability ensures stable operation at high voltage input, while low on-resistance improves system efficiency, reduces power consumption and heat generation.

2. **Industrial equipment**: In industrial automation equipment, K2664-VB can be used for high-voltage switch control and motor drive. Its stable conduction performance and high withstand voltage characteristics make it an ideal choice for controlling high-power motors and drive systems, enabling efficient and reliable motor operation.

3. **Photovoltaic inverter**: In photovoltaic power generation systems, K2664-VB can be used as the switching element of the inverter, responsible for converting DC power into AC power. Its high withstand voltage and low on-resistance characteristics ensure high efficiency and long life of the inverter, making it perform well in renewable energy applications.

4. **Medical equipment**: This MOSFET can be used in power management systems for medical equipment, especially in equipment that requires high reliability and high voltage stability, such as X-ray machines and MRI scanners. The high performance of the K2664-VB ensures the safety and stability of the equipment.

In short, the K2664-VB is a high-voltage, high-efficiency N-type MOSFET that is suitable for a variety of high-power and high-voltage applications and is an ideal choice for power management and industrial control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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