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K1983-01-VB Product details

Product introduction:

K1983-01-VB Product Introduction

K1983-01-VB is a high-voltage single N-channel MOSFET designed for applications requiring high voltage resistance and high efficiency. It is packaged in TO220 and can withstand a drain-source voltage (VDS) of up to 900V, with a maximum drain current (ID) of 5A. The device has a gate-source voltage (VGS) of ±30V and a low threshold voltage (Vth) of 3.5V, ensuring that it can turn on quickly at a lower gate voltage. The on-resistance (RDS(ON)) of K1983-01-VB is 1500mΩ at VGS=10V, reflecting its excellent electrical performance. This MOSFET adopts SJ_Multi-EPI technology, has high power density and reliability, and is widely used in power conversion and high-voltage switch control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 900V 3.5V 5A 1500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 900V 3.5V 5A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 900V 3.5V 5A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
K1983-01-VB Detailed parameter description

- **Model**: K1983-01-VB
- **Package**: TO220
- **Configuration**: Single N-channel
- **Rated drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1500mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI

Domain and module applications:

Application fields and module examples

1. **Switching power supply**: K1983-01-VB is widely used in high-voltage switching power supplies. It can effectively control the switching state of the power supply, thereby improving the conversion efficiency and reliability of the power supply. It is especially suitable for high-power AC-DC and DC-DC converters.

2. **Motor control**: In motor drive and control systems, K1983-01-VB can provide stable current for the motor, ensure efficient start-stop control and speed regulation, and is suitable for various industrial motors and household appliances.

3. **Inverter**: This MOSFET also has important applications in photovoltaic and wind power inverters. It can handle the conversion of high-voltage DC to AC, ensure the high efficiency and stability of the system, and support the efficient use of renewable energy.

4. **Power amplifier**: In audio and RF power amplifiers, K1983-01-VB can be used as a switching device to ensure stable operation under high current and high voltage, meeting the requirements of power amplification and signal amplification.

5. **High-voltage power module**: This device is suitable for high-voltage power modules, such as high-voltage pulse generators and electronic transformers. With its 900V high-voltage capability, it can effectively support various high-voltage applications.

In summary, K1983-01-VB is a high-voltage, high-performance MOSFET that is widely used in switching power supplies, motor control, inverters, power amplifiers, high-voltage power modules and other fields. It can achieve efficient power conversion and control in high voltage and high current environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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