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K1590-T1B-A-VB Product details
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Product Introduction
K1590-T1B-A-VB is a high-efficiency single N-channel MOSFET in a SOT23-3 package, designed for low-voltage and high-efficiency electronic applications. With a drain-source voltage (VDS) of 60V and a maximum gate-source voltage (VGS) of ±20V, the device is suitable for a variety of switching and signal processing applications. Its threshold voltage (Vth) of 1.7V and low on-resistance (RDS(ON) of 3100mΩ@VGS=4.5V and 2800mΩ@VGS=10V) enable it to perform well in low-current operation, helping to reduce power consumption and improve system efficiency.
K1590-T1B-A-VB is a high-efficiency single N-channel MOSFET in a SOT23-3 package, designed for low-voltage and high-efficiency electronic applications. With a drain-source voltage (VDS) of 60V and a maximum gate-source voltage (VGS) of ±20V, the device is suitable for a variety of switching and signal processing applications. Its threshold voltage (Vth) of 1.7V and low on-resistance (RDS(ON) of 3100mΩ@VGS=4.5V and 2800mΩ@VGS=10V) enable it to perform well in low-current operation, helping to reduce power consumption and improve system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
Detailed parameter description
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ@VGS=4.5V
- 2800mΩ@VGS=10V
- **Maximum leakage current (ID)**: 0.3A
- **Technology**: Trench
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ@VGS=4.5V
- 2800mΩ@VGS=10V
- **Maximum leakage current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications：
Applications and modules
K1590-T1B-A-VB is widely used in portable electronic devices, communication equipment and power management systems. Its miniaturized design and low power consumption make it an ideal choice for mobile electronic products such as smartphones, tablets, and Bluetooth devices, especially in switching power supplies and DC-DC converters, which can effectively improve energy conversion efficiency and extend battery life.
In addition, this MOSFET can also be used in automotive electronics and industrial control systems, such as motor drive and load control, to ensure stable performance under various operating conditions. Its excellent performance in high-density circuit design can meet the requirements of modern electronic devices for high efficiency and low power consumption, helping designers achieve more efficient circuit layout and energy management.
K1590-T1B-A-VB is widely used in portable electronic devices, communication equipment and power management systems. Its miniaturized design and low power consumption make it an ideal choice for mobile electronic products such as smartphones, tablets, and Bluetooth devices, especially in switching power supplies and DC-DC converters, which can effectively improve energy conversion efficiency and extend battery life.
In addition, this MOSFET can also be used in automotive electronics and industrial control systems, such as motor drive and load control, to ensure stable performance under various operating conditions. Its excellent performance in high-density circuit design can meet the requirements of modern electronic devices for high efficiency and low power consumption, helping designers achieve more efficient circuit layout and energy management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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