Product introduction:
K1582-T1B-A-VB Product Introduction
The K1582-T1B-A-VB is a high-performance N-channel MOSFET in a compact SOT23-3 package, designed for low voltage and low to medium current applications. The device has a maximum drain-source voltage (VDS) of 60V, making it suitable for a variety of electronic circuits. Its threshold voltage (Vth) is 1.7V, ensuring fast turn-on at low gate voltage, making it suitable for fast switching applications. The K1582-T1B-A-VB has an on-resistance (RDS(ON)) of 2800mΩ at VGS=10V, which can effectively reduce power consumption and heat accumulation, and improve system reliability and efficiency. The maximum drain current (ID) of this MOSFET is 0.3A, making it ideal for small power applications.
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Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-N |
60V |
20(±V) |
1.7V |
0.3A |
|
|
2800mΩ |
|
Detailed parameter description
- **Model**: K1582-T1B-A-VB
- **Package type**: SOT23-3
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS=4.5V
- 2800mΩ @ VGS=10V
- **Maximum drain current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications:
Application fields and module examples
K1582-T1B-A-VB has shown wide application potential in many fields, mainly including:
1. **Mobile devices**:
- Due to its compact package and low power consumption, K1582-T1B-A-VB is very suitable for use in power management and switching circuits of portable electronic devices such as smartphones and tablets.
2. **Consumer electronics**:
- In the power conversion and control circuits of various consumer electronic products (such as digital cameras, game consoles, etc.), K1582-T1B-A-VB can effectively control the power switch and improve the energy efficiency of the overall system.
3. **LED drive circuit**:
- K1582-T1B-A-VB is suitable for use in LED drive circuits. Through its efficient switching characteristics, it provides stable current to drive LED light sources, ensuring lighting effects and extending LED life.
4. **Low-power wireless communication devices**:
- In wireless communication devices, K1582-T1B-A-VB can be used in radio frequency (RF) modules and other related circuits to provide efficient power amplification and signal modulation.
5. **Power adapter**:
- In small power adapters, this MOSFET can be used for input switching and output regulation to help optimize power efficiency and reduce overall energy consumption.
In summary, K1582-T1B-A-VB is a high-quality N-channel MOSFET. With its miniaturized design and superior electrical characteristics, it is suitable for a variety of low-voltage, low-power electronic application scenarios, meeting the needs of modern electronic devices for efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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