Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
|
2800mΩ |
|
Detailed parameter description
- **Package**: SOT23-3
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ@VGS=4.5V
- 2800mΩ@VGS=10V
- **Maximum leakage current (ID)**: 0.3A
- **Technology**: Trench
Domain and module applications：
Applications and modules
K1581-T2B-A-VB is widely used in portable electronic devices, communication equipment and small power management systems. Its high performance and small package make it an ideal choice for switching power supplies and power management modules in mobile phones, tablets and other mobile devices. Due to its low on-resistance characteristics, this MOSFET can effectively reduce power consumption and extend battery life, and is particularly suitable for applications such as power converters and DC-DC converters.
In addition, K1581-T2B-A-VB is also used in automotive electronics and industrial control systems, such as motor control and load switches, to ensure reliable performance under a variety of working conditions. It is particularly prominent in the design requirements of miniaturization and high integration, helping designers achieve more efficient circuit layout and energy management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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