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K1160-VB Product details

Product introduction:

K1160-VB Product Introduction

K1160-VB is a high-efficiency single N-channel MOSFET in TO220 package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) can reach 650V, making it suitable for various high-voltage power management systems. The threshold voltage (Vth) of this MOSFET is 3.5V, which can quickly turn on at a lower gate-source voltage, increase the switching speed, and adapt to high-frequency application requirements. The on-resistance (RDS(ON)) of K1160-VB is 500mΩ at VGS of 10V, supporting a drain current (ID) of up to 9A, ensuring its excellent performance in high-power devices. Its SJ_Multi-EPI technology further improves its efficiency and reliability, enabling it to perform well in a variety of power electronics applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 9A 500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Model**: K1160-VB
- **Package**: TO220
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 500mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI
- **Maximum power dissipation (PD)**: 70W
- **Thermal resistance (RθJC)**: 2.5°C/W
- **Operating temperature range**: -55°C to 150°C

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Domain and module applications:

Application fields and module description

1. **Switching power supply**: K1160-VB is widely used in switching power supply (SMPS), can work in high voltage and high current environment, provide high efficiency power conversion, suitable for computer power supply and industrial power supply module.

2. **Motor drive**: This MOSFET can be used in motor control and drive circuits, especially suitable for use in power tools, household appliances and electric vehicles, supporting smooth current output and high efficiency.

3. **Inverter**: K1160-VB is suitable for solar inverters and other renewable energy systems, which can efficiently convert DC to AC, optimize the utilization of electric energy, and perform well in high-voltage applications.

4. **High-frequency switching circuit**: Due to its low on-resistance and fast switching characteristics, K1160-VB is suitable for high-frequency switching applications, widely used in communication equipment and high-performance computer systems, ensuring fast response and high efficiency.

5. **LED drive circuit**: K1160-VB can be used in high-power LED drive circuits to provide stable current output to ensure the brightness and consistency of LED lighting, suitable for commercial and industrial lighting solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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