Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
|
2800mΩ |
|
Detailed parameter description
- **Product model**: K1133-T2B-A-VB
- **Package type**: SOT23-3
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3100mΩ @ VGS = 4.5V
- 2800mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 0.3A
- **Technology type**: Trench
Domain and module applications：
Applications and modules
K1133-T2B-A-VB MOSFET has a wide range of applications in multiple fields, as follows:
1. **Portable devices**: Due to its small package and low power consumption, K1133-T2B-A-VB is very suitable for power management circuits in portable electronic devices such as smartphones and tablets.
2. **Battery-powered applications**: In battery management systems, the device can be used as a switching element to effectively control the flow of power and extend battery life.
3. **LED driver**: K1133-T2B-A-VB can be used as a switch in LED drive circuits, which can efficiently control the on and off of LEDs.
4. **Small power supply**: Suitable for low-power switching power supplies and DC-DC converters to improve energy efficiency and overall system reliability.
Through these applications, K1133-T2B-A-VB provides a reliable power management solution for various small electronic devices, ensuring efficient operation and stability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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