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JCS630C-O-C-N-B-VB Product details

Product introduction:

Product Introduction: JCS630C-OCNB-VB
JCS630C-OCNB-VB is a high-performance single N-channel power MOSFET in TO220 package, designed for medium voltage and current applications. The device has a maximum drain-source voltage (VDS) of 200V and is suitable for a variety of power management and switch control circuits. Its gate threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 270mΩ at VGS of 10V, and the maximum drain current (ID) is 10A. JCS630C uses Trench technology to provide excellent switching performance and high efficiency, and can play an important role in various industrial and consumer electronics applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 200V 3V 10A 270mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 200V 3V 10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 200V 3V 10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description:
1. **Package**: TO220
- TO220 package has good thermal management performance, suitable for high power applications, and can effectively reduce the operating temperature of the device.

2. **Configuration**: Single N-channel
- The single N-channel structure ensures excellent conduction characteristics and is suitable for various power control and switching applications.

3. **Drain-source voltage (VDS)**: 200V
- The maximum drain-source voltage is up to 200V, making the device stable in medium voltage environments.

4. **Gate-source voltage (VGS)**: ±20V
- The allowable gate-source voltage range is ±20V, providing flexible working conditions and ensuring the safety and stability of the device.

5. **Gate threshold voltage (Vth)**: 3V
- The lower gate threshold voltage supports fast turn-on and improves system response speed.

6. **On-resistance (RDS(ON))**: 270mΩ @ VGS=10V
- At 10V gate voltage, the on-resistance is low, which helps reduce power loss and improve system efficiency.

7. **Drain current (ID)**: 10A
- The maximum continuous drain current is 10A, which is suitable for applications with medium current loads and ensures reliable operation of the device under various conditions.

8. **Technology**: Trench
- Trench technology improves the performance and energy efficiency of the device and is suitable for harsh working environments.

Domain and module applications:

Applications and modules:
1. **DC-DC converter**:
JCS630C-OCNB-VB is very suitable for DC-DC converters, which can convert voltages at high efficiency and meet the high energy efficiency requirements of modern electronic devices.

2. **Power management system**:
In power management applications, this MOSFET can be used for power switches, providing fast switching and stable current output, suitable for various battery-powered devices.

3. **Motor drive**:
JCS630C is suitable for motor drive circuits, especially in situations where medium current and voltage are required, such as fans and small motor control.

4. **LED lighting**:
In LED drive circuits, JCS630C can be used as a switching element, providing efficient current control, ensuring the stability and brightness of the LED, and is suitable for various lighting solutions.

Through its superior performance, JCS630C-OCNB-VB demonstrates great flexibility and reliability in various power supply and control applications, meeting the needs of modern electrical equipment for high efficiency and high safety.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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