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JCS20N20CT-VB Product details

Product introduction:

1. JCS20N20CT-VB Product Introduction

JCS20N20CT-VB is a high-performance single N-channel MOSFET packaged in TO220, designed for medium-high voltage and high current applications. Its maximum drain-source voltage is 200V, which can meet most power management and switch control requirements, and the drain current can reach up to 30A. Using advanced Trench technology, the device has a low on-resistance (RDS(ON) is 110mΩ@VGS=10V), ensuring high efficiency and low heat loss under high load conditions, and is an important component in modern power electronic equipment.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 200V 3V 30A 110mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 200V 3V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 200V 3V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
II. Detailed parameter description of JCS20N20CT-VB

1. **Package type**: TO220
This package has good heat dissipation performance and is suitable for high power and high current applications.

2. **Channel type**: Single N-channel
Designed for positive power switching, effectively controlling current flow and providing better conductivity.

3. **Drain-source voltage (VDS)**: 200V
Medium and high voltage capabilities make it suitable for a variety of power management and switching applications.

4. **Gate drive voltage (VGS)**: ±20V
Flexible gate drive options, compatible with a variety of circuit designs.

5. **Threshold voltage (Vth)**: 3V
The appropriate threshold voltage ensures that the device can be turned on quickly at the appropriate gate voltage, increasing design flexibility.

6. **On-resistance (RDS(ON))**: 110mΩ @ VGS = 10V
Low on-resistance reduces power consumption and improves overall efficiency.

7. **Maximum drain current (ID)**: 30A
Able to withstand large current loads, suitable for various power applications.

8. **Technology type**: Trench
Trench technology provides excellent switching characteristics and low switching losses, improving performance and efficiency.

Domain and module applications:

III. Application fields and module examples of JCS20N20CT-VB

1. **Power management system**
JCS20N20CT-VB is widely used in DC-DC converters, which can effectively convert the input voltage to the required output voltage. Its low on-resistance can reduce energy loss, ensure high conversion efficiency, and is suitable for various power supply designs.

2. **Motor control**
In motor drive applications, JCS20N20CT-VB can be used as a switching element to quickly control the flow of current, which is suitable for high-current starting and braking operations, ensuring stable operation of the motor under high load.

3. **Power inverter**
JCS20N20CT-VB also has important applications in power inverters, especially in the field of renewable energy, such as solar inverters. Its high voltage and high current characteristics enable it to convert and manage power at high efficiency.

4. **Consumer Electronics Devices**
In consumer electronics products that require high-power power management, such as battery management systems and high-efficiency power adapters, the JCS20N20CT-VB provides excellent performance, ensuring stability and high efficiency of the device under high load conditions.

With its excellent voltage and current capabilities, the JCS20N20CT-VB is an ideal choice for power management and switching applications, suitable for industrial, consumer electronics and renewable energy fields, meeting the performance and reliability requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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