Product introduction：
JCS15N60CH-OCNB-VB MOSFET Product Introduction
**JCS15N60CH-OCNB-VB** is a high-voltage N-type MOSFET in a TO-220 package, designed for applications requiring high performance and high voltage resistance. The device has a maximum drain-source voltage (VDS) of 650V, suitable for a variety of high-voltage power management and switching applications. Its maximum gate-source voltage (VGS) is ±30V, ensuring safe and stable operation. The on-resistance (RDS(ON)) of JCS15N60CH-OCNB-VB is 160mΩ @ VGS=10V, which has good conductivity and can effectively reduce power loss. Using SJ_Multi-EPI technology, the device performs stably in high current and high temperature environments, making it an ideal choice for modern power electronic equipment.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
|
160mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: TO-220
- This package provides good heat dissipation, suitable for high power applications, easy installation and electrical connection.
2. **Configuration**: Single N-type channel
- N-type MOSFET design is suitable for use in a variety of circuit configurations and can effectively control the flow of current.
3. **Drain-source voltage (VDS)**: 650V
- The maximum drain-source voltage that the device can withstand in the off state, suitable for high voltage circuits.
4. **Gate-source voltage (VGS)**: ±30V
- The maximum allowable voltage between the gate and the source, ensuring safe and stable operating conditions.
5. **Threshold voltage (Vth)**: 3.5V
- The minimum gate voltage required for the device to start conducting, providing good switching characteristics.
6. **On-resistance (RDS(ON))**:
- 160mΩ @ VGS = 10V
- Low on-resistance improves current transfer efficiency and reduces heat loss.
7. **Current Rating (ID)**: 20A
- Maximum continuous current that the device can handle under normal conditions, suitable for high load applications.
8. **Technology**: SJ_Multi-EPI
- This technology enhances the performance of the device, especially under high voltage and high current conditions, ensuring stability and efficiency.
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Domain and module applications：
Application Examples
1. **Power Management System**:
JCS15N60CH-OCNB-VB is suitable for high voltage power management systems, including AC-DC converters and DC-DC converters. Its high withstand voltage characteristics and low on-resistance effectively reduce power loss during power conversion, thereby improving the energy efficiency and stability of the system.
2. **Industrial Automation**:
In industrial equipment and automation systems, JCS15N60CH-OCNB-VB is widely used in motor drive and load switch control. Its high current handling capability and reliability enable it to work stably in harsh environments, improving the overall performance of the equipment.
3. **Lighting Control System**:
This MOSFET is also suitable for LED drive circuits and other lighting control applications. Due to its low heat loss characteristics, it can reduce power consumption while ensuring brightness, thereby improving the overall efficiency of the system.
4. **Electric Vehicle**:
In electric and hybrid vehicles, JCS15N60CH-OCNB-VB is used in battery management systems and power converters to ensure efficient transmission and conversion of electrical energy. Its high voltage and high current characteristics can meet the stringent performance requirements of electric vehicles.
In summary, JCS15N60CH-OCNB-VB is a versatile N-type MOSFET that is widely used in high-voltage power management, industrial automation, and electric vehicles. It has become an important part of modern power electronic equipment with its high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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