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J648-VB Product details

Product introduction:

Product Introduction: J648-VB
J648-VB is a small, high-efficiency single P-channel power MOSFET in SC75-3 package, designed for low voltage and low current applications. Its maximum drain-source voltage (VDS) is -20V, and the gate-source voltage (VGS) range is ±20V, which is suitable for operation at lower voltages. The device has a low gate threshold voltage (Vth) of -0.8V, and an on-resistance of 540mΩ and 450mΩ at gate voltages of 4.5V and 10V, respectively, supporting a maximum drain current (ID) of -0.4A. The use of advanced trench technology gives it superior switching performance and energy efficiency, making it suitable for a variety of low-power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC75-3 Single-P -20V -0.8V -0.4A 450mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC75-3 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC75-3 Single-P -20V -0.8V -0.4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC75-3 Single-P -20V -0.8V -0.4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC75-3 Single-P
Detailed parameter description:
1. **Package**: SC75-3
- This package is small in size and suitable for compact electronic devices, which is beneficial to PCB space utilization and heat dissipation.

2. **Configuration**: Single P-channel
- Single P-channel structure, suitable for a variety of low-voltage switching and linear applications.

3. **Drain-source voltage (VDS)**: -20V
- This MOSFET can withstand a maximum drain-source voltage of -20V, suitable for low-voltage power management applications.

4. **Gate-source voltage (VGS)**: ±20V
- The allowable gate-source voltage range is ±20V, ensuring the safety of the device under a variety of operating conditions.

5. **Gate threshold voltage (Vth)**: -0.8V
- The lower threshold voltage means that the MOSFET can be turned on at a lower gate voltage, which improves driving flexibility.

6. **On-resistance (RDS(ON))**:
- 540mΩ @ VGS=4.5V
- 450mΩ @ VGS=10V
- The relatively high on-resistance is suitable for low current applications and helps reduce energy consumption.

7. **Drain current (ID)**: -0.4A
- The maximum continuous drain current is -0.4A, which is suitable for low power switching applications.

8. **Technology**: Trench
- The use of Trench technology helps to increase switching speed and reduce conduction losses.

Domain and module applications:

Applications and modules:
1. **Portable Electronic Devices**:
J648-VB is suitable for power management circuits in mobile phones, tablets and other small portable devices. Its compact package design and low on-resistance enable it to effectively manage the power requirements of the device and improve battery life.

2. **LED Driver**:
This MOSFET can be used in LED driver circuits to support low current operation and help achieve stable LED brightness. Due to its high efficiency, it can provide reliable performance in various lighting applications.

3. **Power Switch**:
In low-power power switch modules, J648-VB can be used for efficient power switching, controlling the power on and off, which is common in home appliances and consumer electronics.

4. **Sensor Interface Circuit**:
Due to its low voltage characteristics, J648-VB can also be used in sensor circuits to effectively control the power state of the sensor and ensure the energy efficiency of the system.

With its superior performance and flexible application areas, J648-VB plays an important role in modern low-power electronic products and adapts to the needs of high-performance and small-size design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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