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J607-VB Product details

Product introduction:

J607-VB MOSFET Product Introduction

J607-VB is a high-performance single P-channel MOSFET designed for a variety of high-power switching applications. It uses a TO220 package and is suitable for high-current and low-voltage switching environments. The MOSFET has a drain-source voltage (VDS) of -60V and a gate-source voltage (VGS) rating of ±20V. It uses advanced trench technology to ensure efficient and reliable operation. It has a low threshold voltage (Vth) of -2.5V and an extremely low on-resistance (RDS(ON)) of 9.9mΩ at VGS=4.5V and 8.2mΩ at VGS=10V, making it excellent in reducing conduction losses. At the same time, its maximum drain current (ID) reaches -90A, which is suitable for handling high-power loads.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-P -60V -2.5V -90A 8.2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-P -60V -2.5V -90A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-P -60V -2.5V -90A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-P
Detailed parameter description

- **Package**: TO220
- **Configuration**: Single P channel
- **VDS (drain-source voltage)**: -60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -2.5V
- **RDS(ON) (on-resistance)**:
- 9.9mΩ @ VGS = 4.5V
- 8.2mΩ @ VGS = 10V
- **ID (leakage current)**: -90A
- **Technology**: Trench technology
- **Power dissipation (Pd)**: With high power dissipation capability, suitable for strong thermal management
- **Operating temperature range**: -55°C to 150°C (Tj max)
- **Gate charge (Qg)**: Low gate charge for efficient switching.

Domain and module applications:

Applications and modules

J607-VB MOSFET has a wide range of applications and is suitable for a variety of fields:

1. **Power Management**: Due to its extremely low on-resistance and high current capability, the J607-VB MOSFET is suitable for use in power management modules such as efficient DC-DC converters. This makes it excel in power modules in computer power supplies, telecommunication equipment, and industrial automation, effectively reducing energy consumption and improving the overall efficiency of the system.

2. **Battery Management System**: The J607-VB is ideal for high-power battery management applications, especially in electric vehicles and renewable energy systems. Its P-channel configuration simplifies the design and is suitable for battery protection circuits with high-side switches, ensuring safe and efficient battery charge and discharge management.

3. **Motor Control**: Due to its ability to handle currents up to -90A, the J607-VB is ideal for motor drive applications. These applications include automotive motors, stepper motor drives, etc., especially in industrial and consumer electronics products that require high efficiency and power density.

4. **Switching Power Supply**: This MOSFET can also be widely used in switching power supply circuits. Its low on-resistance and high current handling capability enable it to achieve high efficiency in a variety of power applications, ensuring stable output and reducing heat generation.

The superior performance and reliability of the J607-VB MOSFET make it a preferred solution for high power switching tasks in multiple industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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