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J604-VB Product details

Product introduction:

Product Introduction: J604-VB
J604-VB is a high-performance single P-channel MOSFET in TO-220 package, suitable for high-power applications. Its drain-source voltage (VDS) is -60V and gate-source voltage (VGS) is ±20V, which can provide stable performance under harsh voltage conditions. The device adopts trench technology, with an on-resistance as low as 26mΩ@VGS=4.5V and 19mΩ@VGS=10V, and supports a drain current (ID) of up to -50A, which is very suitable for applications requiring efficient current management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-P -60V -1.7V -50A 19mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-P -60V -1.7V -50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-P -60V -1.7V -50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-P
Detailed parameter description:
1. **Package**: TO-220
- This is a common power device package with good heat dissipation performance, suitable for high-power applications.

2. **Configuration**: Single P-channel MOSFET
- Single P-channel structure, suitable for switching and linear control applications.

3. **Drain-source voltage (VDS)**: -60V
- This MOSFET supports a maximum drain-source voltage of -60V, suitable for medium-power applications.

4. **Gate-source voltage (VGS)**: ±20V
- The maximum gate-source voltage range is ±20V, ensuring that the device works safely under a wide range of gate voltages.

5. **Gate threshold voltage (Vth)**: -1.7V
- A lower gate threshold voltage means that the device can be turned on at a low gate voltage.

6. **On-resistance (RDS(ON))**:
- 26mΩ@VGS=4.5V
- 19mΩ@VGS=10V
- Low on-resistance can significantly reduce power consumption and improve system efficiency.

7. **Drain current (ID)**: -50A
- The device supports a maximum continuous current of -50A, suitable for applications with high current requirements.

8. **Technology**: Trench
- Using advanced Trench technology, the switching performance and power handling capability of the MOSFET are enhanced.

Domain and module applications:

Applications and modules:
1. **Power management modules**:
J604-VB is suitable for efficient DC-DC converters and regulated power modules, especially in low voltage and high current applications. Its low on-resistance helps reduce conversion losses and improve overall efficiency.

2. **Motor drive system**:
This MOSFET can be used in motor control modules to support fast starting and stopping of DC motors, especially suitable for the motor drive part of industrial automation and home appliances.

3. **Photovoltaic system and battery management**:
In photovoltaic inverters, J604-VB is used as a power switch to help solar arrays achieve efficient energy transmission. It can also be used in battery management systems, which are responsible for the control of battery charging and discharging to optimize energy utilization.

4. **Automotive electronic applications**:
Due to its high current handling capability and low conduction losses, J604-VB is often used in automotive load switches such as power distribution modules and on-board electronic devices.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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