Product introduction：
J475-01-VB Product Introduction
J475-01-VB is a high-efficiency P-channel MOSFET in TO220 package, designed for medium and low voltage applications. Its drain-source voltage (VDS) is -60V, suitable for a variety of negative voltage applications. The gate-source voltage (VGS) can reach ±20V, and the threshold voltage (Vth) is -1.7V, allowing it to work effectively at lower drive voltages. Using Trench technology, J475-01-VB provides lower on-resistance (RDS(ON) = 56mΩ @ VGS=4.5V and 48mΩ @ VGS=10V), ensuring excellent performance under high current conditions, and is widely used in power management and switching circuits.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-P |
-60V |
|
-1.7V |
-45A |
|
|
48mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-P |
-60V |
|
-1.7V |
-45A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-P |
-60V |
|
-1.7V |
-45A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: J475-01-VB
- **Package**: TO220
- **Configuration**: Single P channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 56mΩ @ VGS=4.5V
- 48mΩ @ VGS=10V
- **Maximum leakage current (ID)**: -45A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **Power switch**: J475-01-VB is suitable for power switch circuits, which can effectively control the supply of negative voltage. It is widely used in power adapters and chargers to ensure efficient power conversion.
2. **Motor drive**: In small motor control applications, this MOSFET can be used as a switching element in the H-bridge circuit to provide efficient motor control and achieve speed and direction regulation. It is suitable for electric vehicles and home appliances.
3. **LED drive**: J475-01-VB can also be used in LED drive circuits to ensure a stable current supply. It is suitable for various lighting applications and provides efficient lighting solutions.
4. **Battery management**: In battery management systems, this device can control the charging and discharging process. It is suitable for portable electronic devices and energy storage systems to ensure the safety and efficient operation of batteries.
5. **Inverter**: J475-01-VB can be used in inverter circuits and is suitable for renewable energy systems such as solar inverters to achieve efficient energy conversion.
If you need further technical support or application examples, please feel free to contact us!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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