Featured Model

Your present location > Home page > Featured Model

IXTP1R6N50P-VB Product details

Product introduction:

IXTP1R6N50P-VB Product Introduction

The IXTP1R6N50P-VB is a high voltage single N-channel MOSFET in a TO220 package designed for applications up to 650V. With a maximum drain current of 2A, this MOSFET is suitable for use in high voltage and low current electronic devices. With its higher threshold voltage (3.5V) and larger on-resistance (3900mΩ at 4.5V and 3120mΩ at 10V), the IXTP1R6N50P-VB is suitable for power management and control applications that require a high breakdown voltage.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 2A 3120mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 2A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 2A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Model**: IXTP1R6N50P-VB
- **Package**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 3900mΩ @ VGS=4.5V
- 3120mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 2A
- **Technology**: Plannar technology

Domain and module applications:

Applications and modules

1. **High-voltage power supply**: The IXTP1R6N50P-VB is ideal for high-voltage power management and conversion, especially in switch mode power supplies (SMPS), where it can withstand high voltages and provide stable current output.

2. **Lighting equipment**: In LED drive and high-voltage lighting systems, this MOSFET can be used for current control and switching functions to ensure efficient power conversion and stable lighting performance.

3. **Electrical isolation**: In applications requiring high-voltage isolation, the IXTP1R6N50P-VB can be used in high-voltage protection circuits and electrical isolation modules to enhance system safety.

4. **Battery charger**: In high-voltage charger designs, this MOSFET can be used to control the charging process to ensure safe and efficient power management.

5. **Industrial equipment**: The IXTP1R6N50P-VB is suitable for a variety of industrial control and automation equipment, especially in drive and control application scenarios that require high voltage.

Through its excellent high voltage characteristics and wide application applicability, the IXTP1R6N50P-VB is an ideal choice in high voltage power management and control systems, and can effectively meet the needs of high voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat