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IXTP110N055T-VB Product details

Product introduction:

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IXTP110N055T-VB is a single N-channel power MOSFET in a TO-220 package with a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of up to 120A. Its low on-resistance (RDS(ON)) is 5mΩ (at VGS = 10V), which can provide efficient energy conversion and low power consumption in high-current applications. IXTP110N055T-VB is designed with Trench technology to optimize switching performance and reduce heat loss, making it very suitable for use in a variety of high-frequency, low-voltage, and high-current applications.

**2. IXTP110N055T-VB

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 60V 3V 120A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 60V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 60V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
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- **Package type**: TO-220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
- **Drain current (ID)**: 120A
- **Technology**: Trench technology
- **Power dissipation**: 300W typical
- **Switching time**: Fast switching capability for high frequency applications
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance (junction to case)**: 0.5°C/W typical
- **Input Capacitance (Ciss)**: Lower input capacitance for efficient energy conversion

The low on-resistance and high current handling capability of the IXTP110N055T-VB MOSFET enable it to meet the demanding requirements of high-current applications while maintaining system efficiency and stability.

**Three,

Domain and module applications:

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The characteristics of IXTP110N055T-VB enable it to be widely used in multiple fields and modules:

1. **Motor drive**: In DC and brushless motor drive control, IXTP110N055T-VB can be used in high-efficiency motor drive circuits, capable of handling large current requirements while ensuring low power loss, and is widely used in power tools and automation control systems.

2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: IXTP110N055T-VB MOSFET is widely used in the power system of electric vehicles, suitable for high-efficiency power management, motor control and battery management modules, supporting high power conversion and low power consumption.

3. **Switch Mode Power Supply (SMPS)**: In low-voltage, high-current switch mode power supplies, this device can be used as the main switching element, which can efficiently convert energy and improve the overall performance of the system. It is commonly used in computer power supplies, communication equipment and industrial power supplies.

4. **Battery Management System (BMS)**: IXTP110N055T-VB is suitable for BMS, especially in electric vehicles and energy storage system applications, which can effectively manage the charging and discharging of batteries to ensure the safety and efficiency of battery packs.

5. **DC-DC Converter**: In DC-DC converters, this MOSFET can provide efficient energy conversion and low loss, support high-frequency applications, and is commonly found in consumer electronics, automotive electronics and other fields.

IXTP110N055T-VB is widely used as a key component in power electronic systems due to its efficient power handling capability and excellent conduction performance, which can improve system efficiency and reduce costs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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