Product introduction：
IRLML6402G-VB MOSFET Product Introduction
IRLML6402G-VB is a high-performance P-channel power MOSFET in a small SOT23-3 package, designed for low-voltage and high-efficiency applications. The maximum drain-source voltage (VDS) of this MOSFET is -20V, the gate-source voltage (VGS) is ±12V, and it supports a maximum drain current of -4A. The on-resistance of IRLML6402G-VB is 80mΩ at VGS=2.5V, 65mΩ at VGS=4.5V, and 60mΩ at VGS=10V, which can effectively reduce power loss. Using advanced Trench technology, this MOSFET provides excellent switching performance and thermal management, and is very suitable for space-constrained applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P |
-20V |
12（±V） |
-0.8V |
-4A |
80mΩ |
|
60mΩ |
|
Detailed parameter description
- **Package type**: SOT23-3
- **Channel configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.8V
- **On-resistance (RDS(ON))**:
- 80mΩ @ VGS=2.5V
- 65mΩ @ VGS=4.5V
- 60mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4A
- **Technology type**: Trench technology
- **Maximum power consumption**: Based on the specific heat dissipation design, the power consumption should be managed according to the application scenario.
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
Applications and modules
1. **Load switch**: IRLML6402G-VB is very suitable for load switch applications, especially in space-constrained electronic devices. Its low on-resistance and small package make it an ideal choice for consumer electronics such as smartphones, tablets and portable devices.
2. **Power management**: In power management circuits, IRLML6402G-VB can be used for load switching and current control. Its excellent switching performance and low power consumption make it suitable for efficient power conversion and voltage regulation modules.
3. **LED drive circuit**: This MOSFET is suitable for LED driver and dimming circuits, providing precise current control. Its low on-resistance ensures the stability and high efficiency of LED light sources.
4. **Battery management system**: In battery management systems, IRLML6402G-VB can be used for battery switch control and protection circuits. Its low threshold voltage enables it to excel in low voltage operating conditions, thereby improving the efficiency and safety of battery management systems.
5. **Industrial Automation**: In industrial automation equipment, especially those applications with strict space requirements, the IRLML6402G-VB provides reliable switching performance and efficient power management, suitable for various control and protection circuits.
In summary, the IRLML6402G-VB is a P-channel MOSFET suitable for low voltage, high efficiency and space-constrained applications. Its small package and low on-resistance enable it to perform well in load switching, power management, LED driving, battery management and industrial automation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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