Product introduction：
1. Product Introduction (IRLML2502G-VB)
The IRLML2502G-VB is a high-performance single N-channel power MOSFET in a SOT23-3 package. Designed for low-voltage, high-efficiency applications, this MOSFET features a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of ±12V. Its turn-on voltage (Vth) is in the range of 0.5V to 1.5V, suitable for low gate drive requirements. The on-resistance of the IRLML2502G-VB is 42mΩ at a gate voltage of 2.5V and 28mΩ at a gate voltage of 4.5V, and it can handle drain currents of up to 6A. The MOSFET uses Trench technology, has excellent switching characteristics and low conduction losses, and is suitable for space-constrained applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
20V |
12（±V） |
0.5~1.5V |
6A |
42mΩ |
|
|
|
II. Detailed parameter description
| Parameter| Value|
|---------------------|-------------------------------|
| **Model** | IRLML2502G-VB |
| **Package type** | SOT23-3 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 20V |
| **Gate-source voltage (VGS)** | ±12V |
| **Throughput voltage (Vth)** | 0.5~1.5V |
| **On-resistance (RDS(ON))** | 42mΩ @ VGS=2.5V |
| | 28mΩ @ VGS=4.5V |
| **Maximum drain current (ID)** | 6A |
| **Technology** | Trench |
| **Operating temperature range** | -55°C to 175°C |
| **Maximum power dissipation** | 1.25W (heatsinking in SOT23-3 package) |
| **Breakdown voltage** | 20V |
| **Switching speed** | High-speed switching for high-frequency applications |
Domain and module applications：
III. Application fields and module examples
1. **Portable devices**: The small SOT23-3 package and low on-resistance of IRLML2502G-VB make it very suitable for portable devices such as smartphones and handheld devices. These applications often require efficient power switches to save space and extend battery life.
2. **Battery management system**: In the battery management system, IRLML2502G-VB can be used for battery protection and load switching. Its low turn-on voltage and low on-resistance can effectively control the battery charging and discharging process to ensure system stability and safety.
3. **DC-DC converter**: This MOSFET is suitable for use in DC-DC converters, especially in low voltage and high efficiency applications. Its excellent switching characteristics and low conduction losses help improve the overall efficiency of the converter.
4. **Small switching circuits**: In various small switching circuits, IRLML2502G-VB can be used to achieve efficient switching functions. Its small package makes it suitable for space-constrained designs such as modular circuits and embedded systems.
The IRLML2502G-VB is particularly suitable for applications in portable devices, battery management systems, DC-DC converters and small switching circuits due to its low voltage, high efficiency and compact package.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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