Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: TO220
- **Channel configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 4mΩ @ VGS=4.5V
- 3mΩ @ VGS=10V
- **Maximum drain current (ID)**: 120A
- **Technology type**: Trench technology
- **Maximum power consumption**: The specific power consumption depends on the heat dissipation conditions. Appropriate heat dissipation measures should be considered during design.
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
Applications and modules
1. **High-efficiency power conversion**: The low on-resistance and high current carrying capacity of IRL8113-VB make it very suitable for DC-DC converters, AC-DC power supplies and other power management modules. In these applications, MOSFET can effectively reduce power loss and improve energy conversion efficiency.
2. **Motor drive**: Due to its high current handling capability, this MOSFET can be widely used in motor drive systems, such as industrial motor drive and electric vehicle motor control. Its low on-resistance helps improve the energy efficiency and reliability of motor drive systems.
3. **Battery management system**: In battery management and charging control systems, IRL8113-VB can handle large currents and provide efficient switching performance to ensure stable power management during battery charging and discharging.
4. **LED drive circuit**: In high-power LED drive applications, IRL8113-VB can be used as a switching element to control the brightness and switching of LEDs to ensure efficient operation and stability of the system.
5. **Power Amplifier**: In audio power amplifiers and RF power amplifiers, this MOSFET can be used for efficient switching and amplification processes to improve the performance and stability of the power amplifier.
These application areas show that IRL8113-VB is an ideal choice for high-current, high-efficiency power and switching applications, and can meet a variety of demanding power management and control needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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