Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN6(2X2) |
Single-N |
30V |
|
1.7V |
6A |
|
|
23mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN6(2X2) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN6(2X2) |
Single-N |
30V |
|
1.7V |
6A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN6(2X2) |
Single-N |
30V |
|
1.7V |
6A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN6(2X2) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
1. **Package type**: DFN6 (2x2)
2. **Configuration**: Single N-channel MOSFET
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 27mΩ @ VGS = 4.5V
- 23mΩ @ VGS = 10V
7. **Continuous drain current (ID)**: 6A
8. **Operating technology**: Trench technology
9. **Power dissipation (Pd)**: Depends on the specific application environment
10. **Operating temperature range**: -55°C to 150°C
11. **Total gate charge (Qg)**: Depends on specific driving conditions
12. **Input capacitance (Ciss)**: Parameter that affects switching speed
Domain and module applications：
Application fields and module examples:
1. **Mobile device power management**: The small DFN6 package of IRFHS8342TRPBF-VB is very suitable for power management applications in mobile devices. Its low RDS(ON) characteristics enable it to efficiently switch power in a limited space, ensuring long-term battery life and stability of the device.
2. **Portable electronic products**: In portable electronic products such as smart watches and wireless headphones, this MOSFET can provide the necessary current handling capabilities while not taking up too much space due to its small package, which helps to design a more compact circuit board layout.
3. **LED drive circuit**: The low on-resistance and high switching speed of IRFHS8342TRPBF-VB make it suitable as a switching element in LED drive circuits. It can effectively control the switching state of the LED, improve the brightness stability of the light source, and reduce power consumption.
4. **Automotive electronics**: In automotive electronic devices, such as on-board chargers and small control modules, the IRFHS8342TRPBF-VB provides high performance and high temperature resistance. These features ensure reliable operation of automotive electronic systems in harsh environments.
5. **Industrial automation**: This MOSFET is also suitable for switching applications in industrial automation equipment, such as motor drives and power conversion modules. Its high current handling capability and small package enable efficient power management in space-constrained industrial environments.
The high performance features and compact package of the IRFHS8342TRPBF-VB make it an ideal choice for high-performance switching and power management in a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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