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IRFHM9331TR2PBF-VB Product details

Product introduction:

**IRFHM9331TR2PBF-VB MOSFET Product Introduction: **

IRFHM9331TR2PBF-VB is a **single P-channel MOSFET**, packaged as **DFN8 (3x3)**. This MOSFET is designed for negative voltage switching applications, with a **-30V drain-source voltage (VDS)** and **±20V gate-source voltage (VGS)**. Its **threshold voltage (Vth) is -2.5V**, and the on-resistance is 11mΩ at **VGS=10V**. This MOSFET uses **Trench technology** and provides a **-45A maximum continuous drain current**, which is very suitable for application scenarios requiring low conduction losses and high current handling capabilities.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-P -30V -2.5V -45A 11mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-P -30V -2.5V -45A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-P -30V -2.5V -45A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-P
**Detailed parameter description:**

- **Model:** IRFHM9331TR2PBF-VB
- **Package:** DFN8 (3x3)
- **Channel configuration:** Single P-channel
- **Technology:** Trench
- **VDS (drain-source voltage):** -30V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** -2.5V
- **RDS(ON) (on-resistance):**
- 11mΩ @ VGS = 10V
- 18mΩ @ VGS = 4.5V
- **ID (maximum continuous drain current):** -45A
- **Qg (total gate charge):** 60nC @ VGS = 10V
- **Qgs (gate-source charge):** 20nC
- **Qgd (gate-drain charge):** 25nC
- **Gate drive voltage range:** ±20V
- **Ptot (total power consumption):** 50W
- **Rise time (tr):** 30ns
- **Fall time (tf):** 25ns
- **Operating temperature range:** -55°C to 175°C

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Domain and module applications:

**Application Examples:**

1. **Power Management System:**
IRFHM9331TR2PBF-VB performs well in **power management systems**. Due to its **-30V withstand voltage capability** and **11mΩ low on-resistance**, it can efficiently manage load current in switching power supplies and regulators, providing stable power output, especially suitable for power modules and load switches that require high efficiency.

2. **High Current Load Switching:**
The **-45A current capability** of this MOSFET makes it very effective in **high current load switching** applications. It can be used for switching control of high current loads, such as in industrial equipment and power management systems, to ensure reliable load switching and switching operations.

3. **Electric Vehicle (EV) Systems: **
In **Electric Vehicle Systems**, the **low on-resistance** and **high current handling capability** of the IRFHM9331TR2PBF-VB make it ideal for use in battery management and power conversion modules, helping to improve the overall efficiency and stability of the system.

4. **Power Amplifiers: **
Due to its **good thermal performance** and **high current support**, this MOSFET is suitable for **power amplifiers**, especially in applications that require high efficiency and high stability, such as RF power amplifiers and audio power amplifiers.

5. **Inverters and Converters: **
In **Inverter** and **DC-DC Converter** applications, the **low on-resistance** and **high current capability** provided by the IRFHM9331TR2PBF-VB help improve conversion efficiency and reduce power losses, and are suitable for solar inverters and high-efficiency DC-DC converters.

6. **Automotive electrical systems: **
IRFHM9331TR2PBF-VB is suitable for **automotive electrical systems**, such as battery circuit breakers and electrical load control, and its **high current capability** and **high temperature resistance** can ensure reliability and long-term stability in harsh environments.

In summary, IRFHM9331TR2PBF-VB MOSFET has shown wide application potential in **power management systems, electric vehicle systems, power amplifiers, inverters and converters**, and **automotive electrical systems** due to its **high current handling capability, low on-resistance** and **Trench technology**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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