Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-P |
-30V |
|
-3V |
-100A |
|
|
2.9mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-P |
-30V |
|
-3V |
-100A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-P |
-30V |
|
-3V |
-100A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package**: DFN8 (5x6), the compact package provides good heat dissipation performance and space utilization, suitable for high power density applications.
- **Configuration**: Single P-channel MOSFET.
- **VDS (drain-source voltage)**: -30V, suitable for negative voltage applications.
- **VGS (gate-source voltage)**: ±20V, supports a wide gate drive voltage range to ensure stable switching performance.
- **Vth (threshold voltage)**: -3V, negative threshold voltage allows conduction at a lower gate voltage, improving switching efficiency.
- **RDS(ON) (on-resistance)**:
- 5mΩ @ VGS=4.5V, low on-resistance reduces power consumption and heat generation.
- 2.9mΩ @ VGS=10V, further reducing on-resistance and improving efficiency in high current applications.
- **ID (continuous leakage current)**: -100A, capable of handling high current loads, suitable for high power applications.
- **Technology**: Trench technology optimizes switching speed and on-resistance, suitable for high frequency and high current applications.
---
Domain and module applications：
Application Examples
1. **High-efficiency power switch**:
In **High-efficiency power switch** applications, the low on-resistance and high current handling capability of the IRFH9310TRPBF-VB make it ideal for use in power management modules such as power adapters and power tools. It provides efficient current control, reduces energy loss, and improves overall system efficiency.
2. **Load switch**:
For **Load switch** applications, the high current carrying capability and low on-resistance of the IRFH9310TRPBF-VB make it suitable for high-power load control, such as motor control and high-power LED drivers. Its excellent performance ensures stability and reliability in load switching.
3. **DC-DC converter**:
In **DC-DC converter** applications, the low on-resistance and high current capability of the IRFH9310TRPBF-VB help improve conversion efficiency and reduce power consumption. It can effectively support high power density power conversion systems, such as computer power supplies and power modules for communication equipment.
4. **Electric Vehicles**:
In **Electric Vehicles**, this MOSFET can be applied to battery management systems and motor drive systems. Due to its high current handling capability and low power consumption, it can support efficient charging and discharging of batteries and precise control of motors, improving the overall performance and endurance of electric vehicles.
5. **Communication Equipment**:
For power amplifiers and power management modules in **Communication Equipment**, the IRFH9310TRPBF-VB provides excellent current control capability and low power consumption. Its low on-resistance and high current capability ensure the stability and efficient operation of the equipment in high power density applications.
The excellent performance of the IRFH9310TRPBF-VB MOSFET makes it an ideal choice in many fields, especially for applications such as high-efficiency power switches, load switches, DC-DC converters, electric vehicles and communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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