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IRFH8324TRPBF-VB Product details

Product introduction:

Product Introduction - IRFH8324TRPBF-VB MOSFET

The IRFH8324TRPBF-VB is a high-performance single N-channel MOSFET in a DFN8 (5x6) package, specifically designed for applications that require high current handling and low power consumption. Its maximum drain-source voltage is 30V and its drain current is up to 120A. This MOSFET has an extremely low on-resistance of 3mΩ at a VGS of 10V, ensuring efficient performance under high current conditions. The IRFH8324TRPBF-VB uses Trench technology to provide superior switching performance and power consumption control, making it ideal for high power load switching and power management systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 120A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Detailed parameter description

- **Model**: IRFH8324TRPBF-VB
- **Package**: DFN8 (5x6)
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Drain current (ID)**: 120A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Package type**: DFN8 (5x6), with high-density packaging and excellent thermal management capabilities.

Domain and module applications:

Applications and Modules

1. **High-Efficiency Power Conversion and Management**:
The IRFH8324TRPBF-VB is particularly suitable for high-efficiency power converters and management modules such as DC-DC converters and AC-DC power supplies. Its extremely low on-resistance and high current capability enable it to effectively reduce power losses and improve power conversion efficiency. It is widely used in power management systems in computers, telecommunications equipment and data centers, providing reliable power conversion and stable performance.

2. **Load Switching and Motor Drive**:
In load switching and motor drive applications, the IRFH8324TRPBF-VB is an ideal switching element due to its high current handling capability and low on-resistance. It is able to efficiently handle high current loads and is suitable for fields such as industrial automation, home appliances and power tools, ensuring smooth and stable switching operations.

3. **Electric Vehicles and Battery Management Systems**:
The high current capability and low on-resistance of this MOSFET make it ideal for battery management systems (BMS) and electric drive modules for electric vehicles. The IRFH8324TRPBF-VB provides efficient energy conversion and management during battery charging and discharging, and is suitable for electric vehicles, battery energy storage systems, and other high-power battery applications to improve system reliability and efficiency.

4. **Renewable Energy Systems**:
In solar inverters and other renewable energy systems, the IRFH8324TRPBF-VB can efficiently handle power conversion and distribution. Its low on-resistance and high current handling capabilities ensure efficient use of energy, making it suitable for use in solar panels and energy management systems to improve the overall efficiency of the system. Conclusion

With its advanced Trench technology, DFN8 (5x6) package, and extremely low on-resistance, the IRFH8324TRPBF-VB is suitable for a variety of high-power and high-efficiency applications. It has demonstrated excellent performance in power conversion, load switching, electric vehicles, and renewable energy systems, and is an efficient and reliable MOSFET solution.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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