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IRFH8311TRPBF-VB Product details

Product introduction:

Product Introduction: IRFH8311TRPBF-VB

IRFH8311TRPBF-VB is a high-performance N-channel MOSFET, using DFN8 (5x6) package and Trench technology, designed for high current applications. Its maximum drain-source voltage (VDS) is 30V, and it can operate stably under extreme conditions. This MOSFET has an extremely low on-resistance under high current conditions, 2.5mΩ at VGS = 4.5V and 1.8mΩ at VGS = 10V. The IRFH8311TRPBF-VB supports a continuous drain current of up to 160A, which is very suitable for applications with strict requirements on power density and thermal management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 160A 1.8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 160A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 160A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Detailed parameter description:
1. **Package type**: DFN8 (5x6)
2. **Configuration**: Single N-channel MOSFET
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 1.8mΩ @ VGS = 10V
7. **Continuous drain current (ID)**: 160A
8. **Working technology**: Trench technology
9. **Power dissipation (Pd)**: Calculated according to specific application scenarios
10. **Operating temperature range**: -55°C to 150°C
11. **Total gate charge (Qg)**: Depends on driving conditions
12. **Input capacitance (Ciss)**: Parameter that affects switching speed

Domain and module applications:

Applicable fields and module examples:

1. **High-efficiency DC-DC converter**: The low on-resistance and high current handling capability of the IRFH8311TRPBF-VB make it ideal for high-efficiency DC-DC converters. In power supply systems, it can maintain high efficiency under high load and high power conditions, and is widely used in data center power supplies, industrial power supplies, and computer power management.

2. **Electric vehicle battery management system**: This MOSFET is capable of handling high currents in electric vehicle battery management systems. Its low RDS(ON) characteristics help improve system efficiency, reduce energy loss, and enhance battery performance and life.

3. **Motor drive system**: The IRFH8311TRPBF-VB is suitable for a variety of motor drive applications, including industrial automation motor control and high-power power tools. Its high current capability and low on-resistance ensure efficient and stable operation of motor drive systems.

4. **Switching Power Supply (SMPS)**: In switching power supply modules, the low on-resistance and high current carrying capacity of the IRFH8311TRPBF-VB can significantly reduce switching losses and improve power conversion efficiency, making it suitable for applications such as consumer electronics, power adapters, and communications equipment.

5. **Solar Inverter**: This MOSFET is also suitable for use in photovoltaic inverters. Its high current handling capability and low RDS(ON) characteristics help improve the overall efficiency of solar power generation systems and achieve efficient conversion of DC to AC.

The excellent performance of the IRFH8311TRPBF-VB makes it an ideal choice for high current applications that require high power density and low thermal management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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