Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
### **Detailed parameter description:**
- **Model:** IRFH7923TRPBF-VB
- **Package:** DFN8 (5x6)
- **Channel configuration:** Single N-channel
- **Technology:** Trench
- **VDS (drain-source voltage):** 30V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** 1.7V
- **RDS(ON) (on-resistance):**
- 7mΩ @ VGS = 10V
- 9mΩ @ VGS = 4.5V
- **ID (maximum continuous drain current):** 80A
- **Qg (total gate charge):** 45nC @ VGS=10V
- **Qgs (gate-source charge):** 12nC
- **Qgd (gate-drain charge):** 22nC
- **Gate drive voltage range:** ±20V
- **Ptot (total power consumption):** 55W
- **Rise time (tr):** 22ns
- **Fall time (tf):** 17ns
- **Operating temperature range:** -55°C to 175°C
Domain and module applications：
1. **High-efficiency DC-DC converter: **
IRFH7923TRPBF-VB performs well in **high-efficiency DC-DC converter**, especially suitable for low-voltage, high-current conversion applications. Its **low on-resistance of 7mΩ** and **high current capability of 80A** can effectively reduce power loss and improve conversion efficiency, and is suitable for electronic devices that require high-efficiency power supply.
2. **Electric vehicle drive: **
In **electric vehicle drive** systems, the **high current handling capability** and **low conduction loss** of this MOSFET make it very suitable for motor drive control and power switching in electric vehicles, improving the overall efficiency and endurance of the system.
3. **Battery Management System (BMS): **
IRFH7923TRPBF-VB's **30V withstand voltage capability** and **low on-resistance** make it suitable for **battery management systems**, especially in high-efficiency charge and discharge control and battery protection applications, where efficient current switching and stable battery performance management can be achieved.
4. **Consumer Electronics: **
In **consumer electronics**, such as **smartphones** and **tablets**, the MOSFET's low on-resistance and high current support can help improve battery life and charging efficiency while reducing heat generation to ensure long-term reliable operation of the device.
5. **Switching Power Modules: **
IRFH7923TRPBF-VB is also suitable for **switching power modules**. Its high current handling capability and low on-resistance enable it to provide efficient power conversion in switching power supply designs, making it suitable for high-performance computing devices and high-power power management systems.
6. **Power Management and Load Switches: **
This MOSFET also performs well in **Power Management and Load Switches** applications. Its fast switching capability and low conduction loss help optimize load switch efficiency and improve the overall performance of the power management system.
In general, the IRFH7923TRPBF-VB MOSFET has a wide range of application potentials in **high-efficiency DC-DC converters, electric vehicle drives, battery management systems, consumer electronics, switching power modules** and **power management and load switches** due to its **high current handling capability, low on-resistance** and **Trench technology**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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