Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
200V |
|
3V |
30A |
|
|
38mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
200V |
|
3V |
30A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
200V |
|
3V |
30A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package**: DFN8 (5x6), small package design helps save space while providing excellent heat dissipation performance.
- **Configuration**: Unipolar N-channel MOSFET.
- **VDS (drain-source voltage)**: 200V, able to withstand higher voltages, suitable for high-voltage circuits.
- **VGS (gate-source voltage)**: ±20V, supports a wider gate drive voltage range to ensure stable switching performance.
- **Vth (threshold voltage)**: 3V, with low gate drive voltage requirements, suitable for a variety of circuit designs.
- **RDS(ON) (on-resistance)**:
- 38mΩ @ VGS=10V, provides low on-resistance under high voltage drive and reduces power consumption.
- **ID (continuous leakage current)**: 30A, suitable for handling medium current loads.
- **Technology**: Trench technology improves overall performance by optimizing on-resistance and switching speed, especially suitable for high voltage and high current applications.
---
Domain and module applications：
Application Examples:
1. **High Voltage Power Converter**:
IRFH5220TRPBF-VB performs well in **high voltage power converter**, especially when it needs to handle voltage conversion up to 200V. Its high voltage tolerance and low on-resistance make it an ideal choice in power management modules, AC-DC converters (AC-DC converters) for providing efficient and stable power conversion.
2. **Electric Vehicle Battery Management System (BMS)**:
In **Electric Vehicle Battery Management System (BMS)**, this MOSFET is able to handle high voltage battery systems, ensuring efficient charging and discharging of batteries. Its high voltage tolerance and high current carrying capacity make it suitable for battery protection, charging control, and energy management systems.
3. **Solar Inverter**:
IRFH5220TRPBF-VB is suitable for high voltage power conversion in **Solar Inverter**. Due to its high voltage and high current capabilities, this MOSFET can effectively perform power conversion and power management in photovoltaic power generation systems, improving the overall efficiency and stability of the system.
4. **Industrial Power Management**:
In **Industrial Power Management** systems, the high voltage tolerance and high current capability of the IRFH5220TRPBF-VB enable it to handle a variety of high voltage power modules. Its low on-resistance and high efficiency are very suitable for use in motor drives, power protection and industrial control systems.
5. **High Voltage Switching Applications**:
Due to its 200V drain-source voltage capability, this MOSFET can be used in **High Voltage Switching Applications**, such as power switches, power distribution systems, etc. It can provide reliable switching control in high voltage environments to ensure stable operation of the system.
The IRFH5220TRPBF-VB MOSFET exhibits excellent performance in high voltage and high current applications, and is particularly suitable for use in fields such as efficient power conversion, battery management, solar inverters and industrial power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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